Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
expand_more
expand_more
format_list_bulleted
Question
Chapter 3, Problem 3.67P
To determine
The value of the following parameters of the transistor
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
Q3. Draw the output voltage waveform for each circuit including the voltage values. (Ideal
model)
2.2 k2
+30 V
V. OV
-30 V
+5 V
+50 V
47
3.3 kn
-5 V
-50 V
D
2:1
+100 V --
IN4001
R.
V ov
10 k2
-100 V
IN4001
Q4. For the following bridge rectifier circuit, draw the output voltage waveform across the
load (RL) showing the maximum value. Calculate the following:
The average value of the output voltage across the load (RL).
a.
b.
The rms value of the output voltage across the load (RL).
c. The average load current.
d. The rms value of the load current.
(Use constant voltage drop model for the Silicon diode)
5:1
D,
o Vrms
DA
10 KN
(a) Plot the load line and find the Q-point for the diode circuit shown in P3.53 if V = 5 V and R =10kΩ. Use the i-v characteristic as shown in P3.39. (b) Repeat for V =−6V and R =3kΩ. (c) Repeat for V =−3 V and R = 3kΩ.
IN
OUT
GND
V3 (1)
R
VR
Consider the design of a DC power supply as shown above with the following requirements and constraints:
• input from a 240 V RMS 50 Hz mains supply
• diodes have a forward voltage drop of 0.6 V
• utput voltage is required to be 9.1 V supplying a current of 575 mA
• uses a 20:1 step-down transformer
• the voltage regulator has a dropout voltage of 1.8 V
In all of the questions below, give numeric answers correct to 3 significant figures and include units where required.
Keep track of your intermediate results to more significant figures, otherwise rounding errors may lead to incorrect results.
a. What is the peak voltage available at the secondary windings of the transformer?
数字
单位
b. What is the peak voltage across the filter capacitor?
数字
单位
c. What is the minimum allowable voltage at the input of the voltage regulator?
数字
单位
d. What is the maximum allowable allowable ripple voltage across the capacitor?
数字
单位
e. What is the minimum capacitor value that will…
Chapter 3 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 3 - An NMOS transistor with VTN=1V has a drain current...Ch. 3 - An PMOS device with VTP=1.2V has a drain current...Ch. 3 - (a) An nchannel enhancementmode MOSFET has a...Ch. 3 - The NMOS devices described in Exercise TYU 3.1...Ch. 3 - (a) A pchannel enhancementmode MOSFET has a...Ch. 3 - The PMOS devices described in Exercise TYU 3.3...Ch. 3 - The parameters of an NMOS enhancementmode device...Ch. 3 - An NMOS transistor has parameters VTNO=0.4V ,...Ch. 3 - Prob. 3.3EPCh. 3 - The transistor in Figure 3.26(a) has parameters...
Ch. 3 - For the transistor in the circuit in Figure 3.28,...Ch. 3 - Consider the circuit shown in Figure 3.30. The...Ch. 3 - Consider the circuit in Figure 3.30. Using the...Ch. 3 - (a) Consider the circuit shown in Figure 3.33. The...Ch. 3 - Consider the NMOS inverter shown in Figure 3.36...Ch. 3 - Consider the circuit shown in Figure 3.39 with...Ch. 3 - Consider the circuit in Figure 3.41. Assume the...Ch. 3 - Prob. 3.7TYUCh. 3 - Consider the circuit in Figure 3.43. The...Ch. 3 - For the circuit shown in Figure 3.36, use the...Ch. 3 - Consider the circuit shown in Figure 3.44. The...Ch. 3 - For the circuit shown in Figure 3.39, use the...Ch. 3 - For the MOS inverter circuit shown in Figure 3.45,...Ch. 3 - For the circuit in Figure 3.46, assume the circuit...Ch. 3 - The circuit shown in Figure 3.45 is biased at...Ch. 3 - The transistor in the circuit shown in Figure 3.48...Ch. 3 - In the circuit in Figure 3.46, let RD=25k and...Ch. 3 - For the circuit shown in Figure 3.49(a), assume...Ch. 3 - Prob. 3.15EPCh. 3 - Consider the constantcurrent source shown in...Ch. 3 - Consider the circuit in Figure 3.49(b). Assume...Ch. 3 - Consider the circuit shown in Figure 3.50. Assume...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The parameters of an nchannel JFET are IDSS=12mA ,...Ch. 3 - The transistor in the circuit in Figure 3.62 has...Ch. 3 - For the pchannel transistor in the circuit in...Ch. 3 - Consider the circuit shown in Figure 3.66 with...Ch. 3 - The nchannel enhancementmode MESFET in the circuit...Ch. 3 - For the inverter circuit shown in Figure 3.68, the...Ch. 3 - Describe the basic structure and operation of a...Ch. 3 - Sketch the general currentvoltage characteristics...Ch. 3 - Describe what is meant by threshold voltage,...Ch. 3 - Describe the channel length modulation effect and...Ch. 3 - Describe a simple commonsource MOSFET circuit with...Ch. 3 - Prob. 6RQCh. 3 - In the dc analysis of some MOSFET circuits,...Ch. 3 - Prob. 8RQCh. 3 - Describe the currentvoltage relation of an...Ch. 3 - Describe the currentvoltage relation of an...Ch. 3 - Prob. 11RQCh. 3 - Describe how a MOSFET can be used to amplify a...Ch. 3 - Describe the basic operation of a junction FET.Ch. 3 - Prob. 14RQCh. 3 - (a) Calculate the drain current in an NMOS...Ch. 3 - The current in an NMOS transistor is 0.5 mA when...Ch. 3 - The transistor characteristics iD versus VDS for...Ch. 3 - For an nchannel depletionmode MOSFET, the...Ch. 3 - Verify the results of Example 3.4 with a PSpice...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - Consider an nchannel depletionmode MOSFET with...Ch. 3 - Determine the value of the process conduction...Ch. 3 - An nchannel enhancementmode MOSFET has parameters...Ch. 3 - Consider the NMOS circuit shown in Figure 3.36....Ch. 3 - An NMOS device has parameters VTN=0.8V , L=0.8m ,...Ch. 3 - Consider the NMOS circuit shown in Figure 3.39....Ch. 3 - A particular NMOS device has parameters VTN=0.6V ,...Ch. 3 - MOS transistors with very short channels do not...Ch. 3 - For a pchannel enhancementmode MOSFET, kp=50A/V2 ....Ch. 3 - For a pchannel enhancementmode MOSFET, the...Ch. 3 - The transistor characteristics iD versus SD for a...Ch. 3 - A pchannel depletionmode MOSFET has parameters...Ch. 3 - Calculate the drain current in a PMOS transistor...Ch. 3 - sDetermine the value of the process conduction...Ch. 3 - Enhancementmode NMOS and PMOS devices both have...Ch. 3 - For an NMOS enhancementmode transistor, the...Ch. 3 - The parameters of an nchannel enhancementmode...Ch. 3 - An enhancementmode NMOS transistor has parameters...Ch. 3 - An NMOS transistor has parameters VTO=0.75V ,...Ch. 3 - (a) A silicon dioxide gate insulator of an MOS...Ch. 3 - In a power MOS transistor, the maximum applied...Ch. 3 - In the circuit in Figure P3.26, the transistor...Ch. 3 - The transistor in the circuit in Figure P3.27 has...Ch. 3 - Prob. D3.28PCh. 3 - The transistor in the circuit in Figure P3.29 has...Ch. 3 - Consider the circuit in Figure P3.30. The...Ch. 3 - For the circuit in Figure P3.31, the transistor...Ch. 3 - Design a MOSFET circuit in the configuration shown...Ch. 3 - Consider the circuit shown in Figure P3.33. The...Ch. 3 - The transistor parameters for the transistor in...Ch. 3 - For the transistor in the circuit in Figure P3.35,...Ch. 3 - Design a MOSFET circuit with the configuration...Ch. 3 - The parameters of the transistors in Figures P3.37...Ch. 3 - For the circuit in Figure P3.38, the transistor...Ch. 3 - Prob. 3.39PCh. 3 - Prob. 3.40PCh. 3 - Design the circuit in Figure P3.41 so that...Ch. 3 - Prob. 3.42PCh. 3 - Prob. 3.43PCh. 3 - Prob. 3.44PCh. 3 - Prob. 3.45PCh. 3 - Prob. 3.46PCh. 3 - Prob. 3.47PCh. 3 - The transistors in the circuit in Figure 3.36 in...Ch. 3 - For the circuit in Figure 3.39 in the text, the...Ch. 3 - Prob. 3.50PCh. 3 - The transistor in the circuit in Figure P3.51 is...Ch. 3 - Prob. 3.52PCh. 3 - For the twoinput NMOS NOR logic gate in Figure...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - Consider the circuit shown in Figure 3.50 in the...Ch. 3 - The gate and source of an nchannel depletionmode...Ch. 3 - For an nchannel JFET, the parameters are IDSS=6mA...Ch. 3 - A pchannel JFET biased in the saturation region...Ch. 3 - Prob. 3.60PCh. 3 - Prob. 3.61PCh. 3 - The threshold voltage of a GaAs MESFET is...Ch. 3 - Prob. 3.63PCh. 3 - Prob. 3.64PCh. 3 - Prob. 3.65PCh. 3 - For the circuit in Figure P3.66, the transistor...Ch. 3 - Prob. 3.67PCh. 3 - Prob. 3.68PCh. 3 - For the circuit in Figure P3.69, the transistor...Ch. 3 - Prob. 3.70PCh. 3 - Prob. 3.71PCh. 3 - Prob. 3.72PCh. 3 - Using a computer simulation, verify the results of...Ch. 3 - Consider the PMOS circuit shown in Figure 3.30....Ch. 3 - Consider the circuit in Figure 3.39 with a...Ch. 3 - Prob. D3.79DPCh. 3 - Consider the multitransistor circuit in Figure...
Knowledge Booster
Similar questions
- Compute for the following values and show compelete solutions. Find the following: A.) isc B.) iN C.) VN D. Draw circuit equivalentarrow_forward4. From the figure shown which is series-parallel, the following values are: ID ohms in series with the parallel combination of 30 and DD ohms respectively. If the supply voltage is bD volts, find the following: a) equivalent resistance b)total current c)individual current d)current at 3D and D ohms onlyarrow_forwardThe converter below: diodes are ideal; L is large that ide is constant at Ide. S, S2 S3S4 İdc Va ia L Ve i 3R S5 S6A S, S8 1) Draw the waveform of i, ih, iç and ig. Vb Vc Vd -Vm 2) Determine the maximum voltage stress and maximum current stress of the diode S2.arrow_forward
- : For the given circuit, transistors and diodes are silicon where VD₁=VD2=0.7V and |VBE|=0.7V. Neglect base currents. a) Calculate VB1, VB2 which are base to ground DC voltages of Q1 and Q2, respectively b) Calculate the power generated by source c) Calculate the maximum power delivered to load and conversion efficiency Show your calculations step by step and fill the table. (Or you can draw the same table in your answer sheet). No ▷ D₁ D₂ 1K Q₁ +20V C HH RL=1002 a) VB₁[V] VB2 [V] b) PDC [W] c) PL[W] Efficiencyarrow_forwardBriefly describe the operation of a silicon n-channel JFET, including effect of the gate voltages VG = 0 and VG < 0 and source-drain voltages Vos on the flow of charge carriers in the device before and after 'pinch-off'. Use an l-V graph to illustrate your answer. 4. Gate Source Drain FIGURE CREDIT: An Introduction to Semiconductor Devices, D. Neamenarrow_forwardbelow diagramshows a silicon transistor with B = 100 biased by base resistor method. Draw the d.cloadline and determine the operating point. %3Darrow_forward
- 1) It can be accepted that D1 and D2 diodes are from the same family in the circuit given in the figure. a) output voltage, wwwiwwwww wwwww wwwwwwwwwwn w www w 0.33 k2 wwwwww wwwww E 10 V D Si D, Si b) the current flowing through the resistor, ww ww c) currents flowing through the diodes గ wl ww ww calculate. www ww +arrow_forwardQ3 Determine the output voltage (V.) waveform for the clamper network of figure below.. 20 V C = Ipf Tut SI Vi R100K V Ess -20 Varrow_forward3.39. (a) Consider the electronic switch shown in Figure P3.39. Assume ideal diodes, R = RL = 1k2, Vci = +5V, and Vc2 = -5 V. Plot the transfer characteristic (v, versus vin) for Vin ranging from -5 V to +5 V. (b) Repeat for Vci = -5 V and Vc2 = +5 V. RL Vo +. R Vc2arrow_forward
- 3. In the following circuits, given source voltage Vs=9V, R1, R2 and R3 all are 1kOhms. Answer the questions by considering the diodes as ideal and practical silicon ones respectively. Vs Vs Vs R2 R2 R2 Vout P D R1 R1 R3 R1 (a) Vout = ? (b) Vp = ? (c) Vp = ? Note: Vp means the voltage at point p. warrow_forwardSimple circuits techniquesarrow_forwardP 3.15)A single-phase bridge rectifier is supplied from a 220-V, 60-Hz source. The load resistance is RL = 300 Ω. (a) Design a C-filter so that the ripple factor of the output voltage is less than 3%. (b) With the value of capacitor Ce in part (a), calculate the average load voltage Vdcarrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,