An Introduction to Thermal Physics
1st Edition
ISBN: 9780201380279
Author: Daniel V. Schroeder
Publisher: Addison Wesley
expand_more
expand_more
format_list_bulleted
Question
Chapter 7.3, Problem 34P
(a)
To determine
The reason why chemical potential vary with temperature.
(b)
To determine
The expression for the number of conduction electrons.
(c)
To determine
The expression for the number of valence electrons.
(d)
To determine
The expression for the chemical potential as a function of temperature.
(e)
To determine
The shift in the chemical potential for Silicon at room temperature.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
Q.2: A 5 mA diode is connected in series with a 100 ohms resistance and a DC voltage source derived
from the output of a half-wave rectifier (HWR). The ac voltage driving the rectifier is of amplitude 35
volts.
(a) What will be the DC current through the diode (use exponential l-V relation for the diode, and
iteration method)?
(b) What will be the ac resistance of the diode?
If the electrons are distributed in a "quantum-wire" geometry, that is, an ideal-
ized one-dimensional space with a given "line" carrier density ne (1/cm),
(a) derive a one-dimensional density of states and plot it versus the energy E.
(b) Find the relation between ne and the Fermi level at a given temperature T.
(c) Repeat (b) for T = 0.
The intensities of spectroscopic transitions between the vibrational states of a molecule are proportional to the square of the integral ∫ψv′xψvdx over all space. Use the relations between Hermite polynomials given in Table 7E.1 to show that the only permitted transitions are those for which v′ = v ± 1 and evaluate the integral in these cases.
Chapter 7 Solutions
An Introduction to Thermal Physics
Ch. 7.1 - Prob. 1PCh. 7.1 - Prob. 3PCh. 7.1 - Prob. 4PCh. 7.1 - Show that when a system is in thermal and...Ch. 7.1 - Prob. 7PCh. 7.2 - Prob. 8PCh. 7.2 - Prob. 9PCh. 7.2 - Prob. 11PCh. 7.2 - Prob. 12PCh. 7.2 - Prob. 13P
Ch. 7.2 - Prob. 14PCh. 7.2 - Prob. 15PCh. 7.2 - Prob. 16PCh. 7.2 - Prob. 17PCh. 7.2 - Prob. 18PCh. 7.3 - Prob. 19PCh. 7.3 - Prob. 20PCh. 7.3 - Prob. 21PCh. 7.3 - Prob. 22PCh. 7.3 - Prob. 24PCh. 7.3 - Prob. 25PCh. 7.3 - Prob. 26PCh. 7.3 - Prob. 29PCh. 7.3 - Prob. 32PCh. 7.3 - Prob. 33PCh. 7.3 - Prob. 34PCh. 7.4 - Prob. 37PCh. 7.4 - Prob. 38PCh. 7.4 - Prob. 39PCh. 7.4 - Prob. 40PCh. 7.4 - Prob. 41PCh. 7.4 - Prob. 42PCh. 7.4 - Prob. 43PCh. 7.4 - Prob. 44PCh. 7.4 - Prob. 45PCh. 7.4 - Prob. 46PCh. 7.4 - Prob. 47PCh. 7.4 - Prob. 48PCh. 7.4 - Prob. 49PCh. 7.4 - Prob. 50PCh. 7.4 - Prob. 51PCh. 7.4 - Prob. 52PCh. 7.4 - Prob. 53PCh. 7.4 - Prob. 54PCh. 7.4 - Prob. 55PCh. 7.4 - Prob. 56PCh. 7.5 - Prob. 57PCh. 7.5 - Prob. 58PCh. 7.5 - Prob. 59PCh. 7.5 - Prob. 60PCh. 7.5 - The heat capacity of liquid 4He below 0.6 K is...Ch. 7.5 - Prob. 62PCh. 7.5 - Prob. 63PCh. 7.5 - Prob. 64PCh. 7.6 - Prob. 65PCh. 7.6 - Prob. 66PCh. 7.6 - Prob. 67PCh. 7.6 - Prob. 68PCh. 7.6 - If you have a computer system that can do...Ch. 7.6 - Prob. 70PCh. 7.6 - Prob. 71PCh. 7.6 - Prob. 72PCh. 7.6 - Prob. 73PCh. 7.6 - Prob. 75P
Knowledge Booster
Similar questions
- Calculate the mean-free (or average) time between collisions for electrons (in the conduction band; use m') in silicon (0.98mo)and GaAs (0.067m.). If you were to design silicon and GaAs transistors for ballistic transport (no collisions in the channel), how short would the channels have to be? Assume that the electron speed is determined not by the applied electric fięld, but instead by thermal motion: veh = 3kT m" Use silicon mobility 1350 cm²/Vs and GaAs mobility 8500 cm?/Vsarrow_forwardLet f(ɛ) be the Fermi-Dirac distribution function and u be the chemical potential. Obtain the expression for the derivative of f (ɛ)with respect to ɛat & = µ . 1 (а) 2t 1 (b) 6t 1 (c) 4т 1 (d)arrow_forwardGiven V(X) = 6.5 In proof testing of circuit boards, the probability that any particular diode will fail is .01. Suppose a circuit board contains 400 diodes. Write the suitable approximate pmf for the number of diodes on a board that fail.arrow_forward
- Consider two straight wires lying on the x-axis, separated by a gap of 4 nm. The potential energy in the gap is about 3 eV higher than the energy of a conduction electron in either wire. What is the probability that a conduction electron in one wire arriving at the gap will pass through the gap into the other wire? [Hint: Assume that the gap is very wide. Then, a right-moving electron incoming on the gap partially passes through the left edge of the gap and loses its amplitude exponentially fast. By the time it reaches the right edge, its reflection from the right edge can be neglected. Most of the particle wave at that point simply comes out of the gap and arries on in the second wire.]arrow_forwardA solid with electrons localized on lattice sites is often modeled by so- called "tight-binding" model. In this 1D model the dispersion relation is E(k)= -2Eo cos(ka), where a is the lattice constant. Starting from the effective equation of motion, describe how the electron moves in such a model under the influence of the constant electric field. Assume you measure electrical current as a function of time without any scat- tering. You will find an oscillatory behavior for the current. What is the frequency of this current? This is not observed in practice because scattering will exist.arrow_forwardConsider n-doped Ge with N=10¹8 cm-³ with mobility 300 cm²/Vs at room temperature T=300 K. Calculate approximate thermoelectric transport coefficients: 1) mean free path, 2) resistivity, 3) Seebeck coefficient, 4) Peltier coefficient, and 5) electronic thermal conductivity. Use materials parameters for the effective density of states in the conduction band N=10¹⁹ cm³³.arrow_forward
- In a certain semiconductor, the valence band can be approximated by the function E(k) = Eo ak² and the conduction band can be described by the function E(k)= E₁ + 3k². Here E(k) is the electron energy and k is the wavevector. Plot E(k) for the two bands. What is the bandgap of this semiconductor? Is this a direct or indirect bandgap semiconductor?arrow_forwardA Si p- n junction with cross sectional area A= 0.01cm? is formed with N3=2x1017 cm3, Na= 1017cm3. Calculate: a) contact potential b) the depletion region width and c) the junction capacity at 0 and -2 Volts.arrow_forward.Consider a free electron moving in a pure 2D semiconductor. Assume that m and E are the mass and energy of electrons, respectively. (a) Show that the density of states is a constant (not dependent on energy). (b)Derive the Fermi energy at temperature T=0K. (c) What is the optical transition selection rule in the electron intersubbands?arrow_forward
- Each atom of gold (Au) contributes one free electron to the metal. Compute the Fermi energy for gold.arrow_forwardConsider a copper wire that is carrying, say, a few amperes of current. Is the drift speed vd of the conduction electrons that form that current about equal to, much greater than, or much less than the Fermi speed vF for copper (the speed associated with the Fermi energy for copper)?arrow_forwardQ#04. (a) Calculate the number of atoms per unit area in (100), (110) and (111) planes of in bcc crystal with the lattice parameter of 2.5 angstrom.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
College PhysicsPhysicsISBN:9781305952300Author:Raymond A. Serway, Chris VuillePublisher:Cengage Learning
University Physics (14th Edition)PhysicsISBN:9780133969290Author:Hugh D. Young, Roger A. FreedmanPublisher:PEARSON
Introduction To Quantum MechanicsPhysicsISBN:9781107189638Author:Griffiths, David J., Schroeter, Darrell F.Publisher:Cambridge University Press
Physics for Scientists and EngineersPhysicsISBN:9781337553278Author:Raymond A. Serway, John W. JewettPublisher:Cengage Learning
Lecture- Tutorials for Introductory AstronomyPhysicsISBN:9780321820464Author:Edward E. Prather, Tim P. Slater, Jeff P. Adams, Gina BrissendenPublisher:Addison-Wesley
College Physics: A Strategic Approach (4th Editio...PhysicsISBN:9780134609034Author:Randall D. Knight (Professor Emeritus), Brian Jones, Stuart FieldPublisher:PEARSON
College Physics
Physics
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Cengage Learning
University Physics (14th Edition)
Physics
ISBN:9780133969290
Author:Hugh D. Young, Roger A. Freedman
Publisher:PEARSON
Introduction To Quantum Mechanics
Physics
ISBN:9781107189638
Author:Griffiths, David J., Schroeter, Darrell F.
Publisher:Cambridge University Press
Physics for Scientists and Engineers
Physics
ISBN:9781337553278
Author:Raymond A. Serway, John W. Jewett
Publisher:Cengage Learning
Lecture- Tutorials for Introductory Astronomy
Physics
ISBN:9780321820464
Author:Edward E. Prather, Tim P. Slater, Jeff P. Adams, Gina Brissenden
Publisher:Addison-Wesley
College Physics: A Strategic Approach (4th Editio...
Physics
ISBN:9780134609034
Author:Randall D. Knight (Professor Emeritus), Brian Jones, Stuart Field
Publisher:PEARSON