An Introduction to Thermal Physics
An Introduction to Thermal Physics
1st Edition
ISBN: 9780201380279
Author: Daniel V. Schroeder
Publisher: Addison Wesley
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Chapter 7.3, Problem 33P

(a)

To determine

The reason why in the first approximation model, the chemical potential must always lie precisely in the middle of the gap.

(b)

To determine

The expression for the number of conduction electrons per unit volume.

(c)

To determine

The number of conduction electrons in the cubic centimeter of Silicon at room temperature and the comparison between conduction electrons of Silicon and of Copper.

(d)

To determine

The reason why semiconductor conducts electricity better at higher temperature.

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Students have asked these similar questions
.Consider a free electron moving in a pure 2D semiconductor. Assume that m and E are the mass and energy of electrons, respectively. (a) Show that the density of states is a constant (not dependent on energy). (b)Derive the Fermi energy at temperature T=0K. (c) What is the optical transition selection rule in the electron intersubbands?
Using the appropriate distribution function, f(E) for electrons in metals, show that the probability of occupation of electrons at Fermi energy. Er for temperatures above 0 K is 0.5. If the temperature is raised to 100 K, will the probability of occupation at E, increase or remain the same? Use the distribution function to prove your answer.
Metallic lithium has a bcc crystal structure. Each unit cell is a cube of side length a = 0.35 nm. (a) For a bcc lattice, what is the number of atoms per unit volume? Give your answer in terms of a. (Hint: How many atoms are there per unit cell?) (b) Use the result of part (a) to calculate the zero-temperature Fermi energy EF0 for metallic lithium. Assume there is one free electron per atom.
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