EBK PHYSICS FOR SCIENTISTS & ENGINEERS
5th Edition
ISBN: 9780134296074
Author: GIANCOLI
Publisher: VST
expand_more
expand_more
format_list_bulleted
Question
Chapter 40, Problem 41P
To determine
Prove that the probability for the state at the Fermi energy is being occupied is exactly
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
2)
(i) The Fermi
Silver is
temperature we
14%
in
which
Fermi
Energy of the
4.4 ev. At what
(au expect a
probability that electrons
have an
silver
Joom
density
is 2%
energy?
(11) Consider
silicon sample at
temperature with hole
2x (012 cm-3
be
energy
a
above the
a) Estimate the electron density
b) determine the acceptor density
Concentration if the donor density
is
1012
(c)
Obtain expressions for the Fermi energy, the total energy and the density of states for a
free electron gas in one dimension. Show the variation of the density of states with
energy.
(c) Calculate the Fermi energy of silver from the
data given below:
atom.
Density of Silver = 10.5 gm/cm³
atomic weight = 108
h = 6.62×10-34 Joule - sec
m = 9.1×10-³1 Kg.
Avogadro's number =6.02×10-21 atoms/gm-
Chapter 40 Solutions
EBK PHYSICS FOR SCIENTISTS & ENGINEERS
Ch. 40 - What type of bond would you expect for (a) the N2...Ch. 40 - Describe how the molecule CaCl2 could be formed.Ch. 40 - Does the H2 molecule have a permanent dipole...Ch. 40 - Although the molecule H3 is not stable, the ion...Ch. 40 - The energy of a molecule can be divided into four...Ch. 40 - Would you expect the molecule H2+ to be stable? If...Ch. 40 - Explain why the carbon atom (Z = 6) usually forms...Ch. 40 - Prob. 1PCh. 40 - (II) The measured binding energy of KCl is 4.43eV....Ch. 40 - (I) Show that the quantity 2/I has units of...
Ch. 40 - Prob. 9PCh. 40 - Prob. 23PCh. 40 - Prob. 24PCh. 40 - Prob. 25PCh. 40 - Prob. 26PCh. 40 - Prob. 27PCh. 40 - Prob. 28PCh. 40 - Prob. 30PCh. 40 - Prob. 31PCh. 40 - Prob. 32PCh. 40 - Prob. 33PCh. 40 - Prob. 34PCh. 40 - Prob. 35PCh. 40 - Prob. 36PCh. 40 - Prob. 37PCh. 40 - Prob. 38PCh. 40 - Prob. 39PCh. 40 - Prob. 40PCh. 40 - Prob. 41PCh. 40 - Prob. 42PCh. 40 - Prob. 43PCh. 40 - Prob. 44P
Knowledge Booster
Similar questions
- (c) A common emitter BJT circuit and its voltage transfer curve is shown in Fig. 1(c) respectively. Assume the transistor common-emitter current gain, ß = 50, VBE (on) = 0.7 V, Rg = 100 kn and Rc = 1 k2. (i) Determine the input voltage at the point x. (ii) Calculate the base current, Ig and collector current, Ic at the point x. +Vcc Vo(V) Rc 5- Vo RB V, oww -RAR- IB VBE 0.5 V,(V) 15 Fig. 1(c) -END OF QUESTION-arrow_forward10-18. Consider a system in which the density of states of the electrons f(ɛ) is f(E) = constant = D ɛ>0 ɛ<0 Calculate the Fermi energy for this system; determine the condition for the system being highly degenerate; and then show that the heat capacity is proportional to T for the highly degenerate case.arrow_forward(4) Find the Fermi energy of lithium Er, the Fermi temperature TF, and the speed of wF of the fastest free electrons.arrow_forward
- At T = 300 K, how far above the Fermi energy is a state forwhich the probability of occupation by a conduction electron is 0.10?arrow_forward1) An abrupt Si p-n" junction of cross sectional area 10 cm' is operated at 300K and has the following properties: p-side: N. = 10" cm ', T, = 10 us; n-side: N, » N,. a) Calculate the built-in potential. Hint: use half the band gap energy for the Fermi level shift for the n-side. b) Calculate the junction width at a reverse bias of 20 V. c) Calculate the peak electric field at a reverse bias of 20 V. d) Calculate the junction capacitance at a reverse bias of 20 V. e) Calculate the excess electron concentration on the p-side of the depletion zone An = npo (ext – 1) at a forward bias of 0.7643 V. ) Calculate the stored electron charge due to the electron diffusion current on the p side of the junction at the forward bias of part e (forward current 20 mA). The calculation of part (f) can be done by integrating the minority charge density on the p-side, Q = -qA S" An e-x/hn dx.arrow_forward(b) Copper crystallises as FCC (face centred cubic). Given that the atomic radius and density of a given copper sample are 1.28 x 1010 m and 8.98 x 10' kg/m' respectively, carry out the following: Calculate the mass of the copper sample. T'ake Avogadro's number, NA = 6.023 x 1023 atoms/mole. (i) (ii) If the interatomic planar spacing, d, in the sample above is 2.96 x 1010 m, determine the angle at which the first Bragg reflection will occur from the (111) plane if x-radiation of wavelength 1.52 x 10-10 m is used for the analysis. (c) Give two uses of pure copper and two commercial applications of copper alloys.arrow_forward
- 2. (a) A molecule in thermal equilibrium at temperature Thas 4 accessible states, with energies E, = -e, E2 = E3 = 0 and E, = e. (i) What is the partition function for this molecule? (ii) What is its internal energy? (b) Consider a gas of N fermions. At T = 0, what does the Fermi momentum represent? Consider the occupation number for state i, (ni). In the limit (i) (ii) of T → 0, what are the possible values (n;) can take? Explain your answer in terms of the relative values of the energy of the state and the chemical potential.arrow_forward(b) Copper crystallises as FCC (face centred cubic). Given that the atomic radius and density of a given copper sample are 1.28 x 10-10 m and 8.98 x 10' kg/m' respectively, carry out the following: (i) Calculate the mass of the copper sample. Take Avogadro's number, NA = 6.023 x 1023 atoms/mole. If the interatomic planar spacing, d, in the sample above is 2.96 x 1010 m, determine the angle at which the first Bragg reflection will occur from the (111) plane if x-radiation of wavelength 1.52 x 10-10 m is used for the analysis. (ii)arrow_forwardAn n-type Si wafer has been doped uniformly with 10" cm antimony (Sb) atoms. Calculate the position of the Fermi energy with respect to the Fermi energy Er in intrinsic Si nlx10" cm] 0.363 eV 0.288 eV O 0.298 eV O 0.267eVarrow_forward
- a) What is the probability of an electron state being filled if it is located at the Fermilevel?(b) If the probability that a state being filled at the conduction band edge (Ec) isprecisely equal to the probability that a state is empty at the valence band edge(Ev), where is the Fermi level located?(c) The Maxwell–Boltzmann distribution is often used to approximate the Fermi-Dirac distribution function. On the same set of axes, sketch both distributionsas a function of (E – E F)/kT. Consider only positive values of E – EF . For whatrange of (E – EF)/kT is the Maxwell–Boltzmann approximation accurate towithin 10%?arrow_forward6) a) Write down a relation giving the number of electrons occupying the energy states between the energy interval de at ɛ. b) What is the probability that a state 0.1 eV above the Fermi level is occupied by an electron at room temperature ? What is the same probability if that state is 1 eV above the Fermi level ? c) What is a magnetic moment ? The neutron is a neutral particle, but it has a magnetic moment. Explain why it is so.arrow_forward(a) A molecule in thermal equilibrium at temperature Thas 4 accessible states, with energies E, = -€, E2 = E3 = 0 and E4 = e. (i) What is the partition function for this molecule? (ii) What is its internal energy? (b) Consider a gas of N fermions. (i) At T = 0, what does the Fermi momentum represent? (ii) Consider the occupation number for state i, (n;). In the limit of T → 0, what are the possible values (n;) can take? Explain your answer in terms of the relative values of the energy of the state and the chemical potential. (c) Consider a classical gas of N atoms. (i) If the particles are distinguishable, what would be the expression of the partition function of the system in terms of that of a single atom, Z,? (ii) If the particles are indistinguishable, what would be the expression of the partition function of the system in terms of that of a single atom, Z,?arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
University Physics Volume 3PhysicsISBN:9781938168185Author:William Moebs, Jeff SannyPublisher:OpenStax
Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning
University Physics Volume 3
Physics
ISBN:9781938168185
Author:William Moebs, Jeff Sanny
Publisher:OpenStax
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning