EBK PHYSICS FOR SCIENTISTS & ENGINEERS
5th Edition
ISBN: 9780134296074
Author: GIANCOLI
Publisher: VST
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Question
Chapter 40, Problem 28P
(a)
To determine
Prove the ionic cohesive energy is
(b)
To determine
Find the potential energy for NaI molecule.
(c)
To determine
Find the potential energy for MgO molecule.
(d)
To determine
Find the percentage of difference in potential energy if
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Students have asked these similar questions
(c) Calculate the Fermi energy of silver from the
data given below:
atom.
Density of Silver = 10.5 gm/cm³
atomic weight = 108
h = 6.62×10-34 Joule - sec
m = 9.1×10-³1 Kg.
Avogadro's number =6.02×10-21 atoms/gm-
(b) Copper crystallises as FCC (face centred cubic). Given that the atomic radius and density of
a given copper sample are 1.28 x 1010 m and 8.98 x 10' kg/m' respectively, carry out the following:
Calculate the mass of the copper sample. T'ake Avogadro's number, NA = 6.023 x 1023
atoms/mole.
(i)
(ii) If the interatomic planar spacing, d, in the sample above is 2.96 x 1010 m, determine the angle
at which the first Bragg reflection will occur from the (111) plane if x-radiation of wavelength
1.52 x 10-10 m is used for the analysis.
(c) Give two uses of pure copper and two commercial applications of copper alloys.
3. (a) One way of treating the vibrational modes of a linear diatomic solid is to assume
that the atoms have the same masses, but the springs on either side of an atom have
spring constants K and G, respectively. Show that the dispersion relation of such a lattice
is given by
(K+G`
+G)' - 4KGsin ka
M
where M is the mass of the ion, G and K the lattice constants, a is the periodic distance
between masses and k the lattice wave vector.
(i)
(ii)
Sketch the dispersion relation
Discuss what happens when K = G and K >> G.
(b) In diatomic (linear) lattice, why do we assume same o and k.
Chapter 40 Solutions
EBK PHYSICS FOR SCIENTISTS & ENGINEERS
Ch. 40 - What type of bond would you expect for (a) the N2...Ch. 40 - Describe how the molecule CaCl2 could be formed.Ch. 40 - Does the H2 molecule have a permanent dipole...Ch. 40 - Although the molecule H3 is not stable, the ion...Ch. 40 - The energy of a molecule can be divided into four...Ch. 40 - Would you expect the molecule H2+ to be stable? If...Ch. 40 - Explain why the carbon atom (Z = 6) usually forms...Ch. 40 - Prob. 1PCh. 40 - (II) The measured binding energy of KCl is 4.43eV....Ch. 40 - (I) Show that the quantity 2/I has units of...
Ch. 40 - Prob. 9PCh. 40 - Prob. 23PCh. 40 - Prob. 24PCh. 40 - Prob. 25PCh. 40 - Prob. 26PCh. 40 - Prob. 27PCh. 40 - Prob. 28PCh. 40 - Prob. 30PCh. 40 - Prob. 31PCh. 40 - Prob. 32PCh. 40 - Prob. 33PCh. 40 - Prob. 34PCh. 40 - Prob. 35PCh. 40 - Prob. 36PCh. 40 - Prob. 37PCh. 40 - Prob. 38PCh. 40 - Prob. 39PCh. 40 - Prob. 40PCh. 40 - Prob. 41PCh. 40 - Prob. 42PCh. 40 - Prob. 43PCh. 40 - Prob. 44P
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- Cu Assume that the crystal structure of metallic copper (Cu) results in a density of atoms p = 8.46 × 10²m 3. Each Cu atom in the crystal donates one electron to the conduction band, which leads, for the 3-D Fermi gas, to a densityu of states g(ɛ) = 2 x = ( 2 m ² ) ² 1/2 where m is the effective mass of the conduction electrons. In the low temperature limit (i.c. T = 0 K), find the Fermi energy E, in units of eV. You may assume m* to be equal to the free electron mass marrow_forward1.2 Below 24.5 K, Ne is a crystalline solid with an FCC structure. The interatomic interaction energy per atom can be written as: (1) 6 E(r) = -28 2E 14.45* (ii) (iii) – 12 13¹] (ev/atom) Where, & and o are constants that depend on the polarizability, the mean dipole moment, and the extent of overlap of core electrons. For crystalline Ne, & = 3.121 x 10-3 eV and a = 0.274 nm. 12.13 Show that the equilibrium separation between the atoms in an inert gas crystal is given by ro= (1.090) o. What is the equilibrium interatomic separation in the Ne crystal? Find the bonding energy per atom in solid Ne.arrow_forwardSilicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The hole concentration?arrow_forward
- B/ A new semiconductor material is to be n-type and doped with 6x10¹ cm³ donor atoms. Assume complete ionization and assume N,= 0. The effective density of states functions are N, =1.&r 10¹ cm and N,= 1.2x10 cm³ at 7-300 K. A special semiconductor device fabricated with this material requires that the electron concentration be no greater than 6.08x10¹ cm³ at 7= 400 K. What is the minimum band gap energy required in this new material?arrow_forwardSilicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T= 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The acceptor concentration?arrow_forwardSilicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?arrow_forward
- Silicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?arrow_forwardThe ionic crystal of NaCl has an fcc structure as shown below with the position of the Cl atom located at : (0 0 0); (½ ½ 0); ( ½ 0 %) and (0 ½) and Na atom is located at : (½ ½½) + fcc translation. The following are the physical data of NaCl: - Ionic radius Na = 0.98 A, Cl ion radius 1.81 A Atomic mass of Na = 22.99 amu, Atomic mass of Cl = 35.45 amu NaCl bulk modulus = 2.40 x 1010 N/m - Madelung's constant = 1.75 Young's modulus in the direction [100] = 5 x 1010 Nm-2 Debye temperature = 281 K - State the structural factors of NaCl, F in fNa and fCl (f = atomic scattering factor). Also determine the condition (h k 1) so that the value of F = 0.arrow_forwardSilicon atoms with a concentration of 7× 1010 cm³ are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 × 1017 cm-³ and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The electron concentration ?arrow_forward
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