EBK PHYSICS FOR SCIENTISTS & ENGINEERS
5th Edition
ISBN: 9780134296074
Author: GIANCOLI
Publisher: VST
expand_more
expand_more
format_list_bulleted
Question
Chapter 40, Problem 33P
(a)
To determine
Find the energy which has 15.0% occupancy probability for copper at
(b)
To determine
Find the energy which has 15.0% occupancy probability for copper at
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
3) The Seebeck voltage for Copper Constantan (Cn) thermocouple is given by the linear relation
V = a+ bT,
For Cu : a = 0.6 mV, andb=0.008 mV/K. For Cn : a = -20 mV, and b = -0.056 mV/K.
Calculate the thermoelectric power when the hot junction is at 100 C. 24
where T is the absolute temperature of the hot junction, and a and b are constants
(b) Copper crystallises as FCC (face centred cubic). Given that the atomic radius and density of
a given copper sample are 1.28 x 1010 m and 8.98 x 10' kg/m' respectively, carry out the following:
Calculate the mass of the copper sample. T'ake Avogadro's number, NA = 6.023 x 1023
atoms/mole.
(i)
(ii) If the interatomic planar spacing, d, in the sample above is 2.96 x 1010 m, determine the angle
at which the first Bragg reflection will occur from the (111) plane if x-radiation of wavelength
1.52 x 10-10 m is used for the analysis.
(c) Give two uses of pure copper and two commercial applications of copper alloys.
(c) Calculate the Fermi energy of silver from the
data given below:
atom.
Density of Silver = 10.5 gm/cm³
atomic weight = 108
h = 6.62×10-34 Joule - sec
m = 9.1×10-³1 Kg.
Avogadro's number =6.02×10-21 atoms/gm-
Chapter 40 Solutions
EBK PHYSICS FOR SCIENTISTS & ENGINEERS
Ch. 40 - What type of bond would you expect for (a) the N2...Ch. 40 - Describe how the molecule CaCl2 could be formed.Ch. 40 - Does the H2 molecule have a permanent dipole...Ch. 40 - Although the molecule H3 is not stable, the ion...Ch. 40 - The energy of a molecule can be divided into four...Ch. 40 - Would you expect the molecule H2+ to be stable? If...Ch. 40 - Explain why the carbon atom (Z = 6) usually forms...Ch. 40 - Prob. 1PCh. 40 - (II) The measured binding energy of KCl is 4.43eV....Ch. 40 - (I) Show that the quantity 2/I has units of...
Ch. 40 - Prob. 9PCh. 40 - Prob. 23PCh. 40 - Prob. 24PCh. 40 - Prob. 25PCh. 40 - Prob. 26PCh. 40 - Prob. 27PCh. 40 - Prob. 28PCh. 40 - Prob. 30PCh. 40 - Prob. 31PCh. 40 - Prob. 32PCh. 40 - Prob. 33PCh. 40 - Prob. 34PCh. 40 - Prob. 35PCh. 40 - Prob. 36PCh. 40 - Prob. 37PCh. 40 - Prob. 38PCh. 40 - Prob. 39PCh. 40 - Prob. 40PCh. 40 - Prob. 41PCh. 40 - Prob. 42PCh. 40 - Prob. 43PCh. 40 - Prob. 44P
Knowledge Booster
Similar questions
- (1) for A, C & D 3RD SIGNIICANCE BUT FOR B, EXACT NO TOLERANCE. ANSWER ALSO E PLSarrow_forward(i) The total electrical resistivity of metals is the sum of the contributions from thermal vibrations, impurities and plastic deformation; (ii) the resistivity rises linearly with temperature above -200 degree Celsius; (iii) increasing the concentration of impurity results in an enhancement of impurity; (iv) plastic deformation also raises the electrical resistivity due to the increased numbers of electron-scattering dislocations. Which of the above statements is false? D. (iv) A. (i) C. (iii) E. All of the above B. (ii) Other:arrow_forwardSilicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The hole concentration?arrow_forward
- Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?arrow_forwardSilicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T= 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The acceptor concentration?arrow_forward(2) Show that heat capacity at constant pressure Cp is given by Cp C₂ = (37)₂ + ² (37) ₂ p рarrow_forward
- The Fermi energies of two metals X and Y are 5 eV and 7eV and their Debye temperatures are 170 K and 340 K , respectively. The molar specific heats of these metals volume at low temperatures be written as at constant can (C, )x =rxT + AxT' and (C, ), =7yT+ A,T³ where y and A are constants. Assuming that the thermal effective mass of the electrons in the two metals are same, which of the following is correct? 7 Ax = 8 (b) Y x 7 Ax 1 (a) = - = - 5'Ay 5' A, 8. Y Y x 5 Аx 1 Y x 5 Аx (c) (d) = 8 = - 7' Ay 7' Ay 8. II IIarrow_forward(a) Show that the resistivity of intrinsic germanium at 300 °K is 0.45 2.m if n₁ = 2.5×10¹⁹ m²³, n = 0.38 m²/V.s, p = 0.18 m²/v.s. -3 (b) If a donor-type impurity added to the extent of 1 atom per 108 germanium atoms, prove that the resistivity drops to 0.037 2.m. Density = 5.32x10³ Kg/m³, atomic weight 72.6.arrow_forwardConsider a power transistor that dissipates 0.2 W of power in an environment at 30°C. The transistor is 0.4 cm long and has a diameter of 0.5 cm. Assuming heat to be transferred uniformly from all surfaces, determine (a) the amount of heat this resistor dissipates during a 24-h period. in kWh; (b) the heat flux on the surface of the transistor, in W/m2;arrow_forward
- (Electroplating) A steel part with surface area A = 130 cm² is to be tin-plated. What average plating thickness will result if 15 amps are applied for 10 min in an acid sulfate electrolyte bath? The cathode efficiency for tin is E = 90% and the plating constant C = 4.21 x 10-2 mm³/amp-s. V = CIt V = ECIt d = V A Typical cathode efficiencies in electroplating and values of plating constant C. Compiled from [18]. Plate Metal Electrolyte Cadmium (2) Cyanide Chromium (3) Chromium-acid-sulfate Copper (1) Gold (1) Nickel (2) Silver (1) Tin (4) Zinc (2) Cyanide Cyanide Acid sulfate Cyanide Acid sulfate Chloride Plating Constant ca Cathode Efficiency % mm³/amp-s (in³/amp-min) 6.73 × 10-² (2.47 × 10-4) X 2.50 × 10-2 (0.92 × 10-4) 7.35 x 10-2 10.6 x 10-² 3.42 x 10-2 (2.69 × 10-4) (3.87 × 10-4) (1.25 × 10-4) 10.7 x 10-2 (3.90 × 10-4) 4.21 x 10-2 (1.54 × 10-4) 4.75 × 10-2 (1.74 x 10-4) 90 15 98 80 95 100 90 95 ¹Most common valence given in parentheses (); this is the value assumed in determining…arrow_forward(c) A common emitter BJT circuit and its voltage transfer curve is shown in Fig. 1(c) respectively. Assume the transistor common-emitter current gain, ß = 50, VBE (on) = 0.7 V, Rg = 100 kn and Rc = 1 k2. (i) Determine the input voltage at the point x. (ii) Calculate the base current, Ig and collector current, Ic at the point x. +Vcc Vo(V) Rc 5- Vo RB V, oww -RAR- IB VBE 0.5 V,(V) 15 Fig. 1(c) -END OF QUESTION-arrow_forward(b) Copper crystallises as FCC (face centred cubic). Given that the atomic radius and density of a given copper sample are 1.28 x 10-10 m and 8.98 x 10' kg/m' respectively, carry out the following: (i) Calculate the mass of the copper sample. Take Avogadro's number, NA = 6.023 x 1023 atoms/mole. If the interatomic planar spacing, d, in the sample above is 2.96 x 1010 m, determine the angle at which the first Bragg reflection will occur from the (111) plane if x-radiation of wavelength 1.52 x 10-10 m is used for the analysis. (ii)arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
College PhysicsPhysicsISBN:9781305952300Author:Raymond A. Serway, Chris VuillePublisher:Cengage Learning
University Physics (14th Edition)PhysicsISBN:9780133969290Author:Hugh D. Young, Roger A. FreedmanPublisher:PEARSON
Introduction To Quantum MechanicsPhysicsISBN:9781107189638Author:Griffiths, David J., Schroeter, Darrell F.Publisher:Cambridge University Press
Physics for Scientists and EngineersPhysicsISBN:9781337553278Author:Raymond A. Serway, John W. JewettPublisher:Cengage Learning
Lecture- Tutorials for Introductory AstronomyPhysicsISBN:9780321820464Author:Edward E. Prather, Tim P. Slater, Jeff P. Adams, Gina BrissendenPublisher:Addison-Wesley
College Physics: A Strategic Approach (4th Editio...PhysicsISBN:9780134609034Author:Randall D. Knight (Professor Emeritus), Brian Jones, Stuart FieldPublisher:PEARSON
College Physics
Physics
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Cengage Learning
University Physics (14th Edition)
Physics
ISBN:9780133969290
Author:Hugh D. Young, Roger A. Freedman
Publisher:PEARSON
Introduction To Quantum Mechanics
Physics
ISBN:9781107189638
Author:Griffiths, David J., Schroeter, Darrell F.
Publisher:Cambridge University Press
Physics for Scientists and Engineers
Physics
ISBN:9781337553278
Author:Raymond A. Serway, John W. Jewett
Publisher:Cengage Learning
Lecture- Tutorials for Introductory Astronomy
Physics
ISBN:9780321820464
Author:Edward E. Prather, Tim P. Slater, Jeff P. Adams, Gina Brissenden
Publisher:Addison-Wesley
College Physics: A Strategic Approach (4th Editio...
Physics
ISBN:9780134609034
Author:Randall D. Knight (Professor Emeritus), Brian Jones, Stuart Field
Publisher:PEARSON