Find the resistivity at 300 K for a Si sample doped with 1.0 * 10'4 cm of phosphorous atoms, 8.5 x 1012 cm of arsenic atoms and 1.12 * 10'cm of boron atoms. Assume that the impurities are completely ionized and the mobilities are un = 1500 cm? N.s, up = 500 cm /.s, independent of impurity concentrations. n; = 9.65 * 109 cm in Si at 300 K.

Find the resistivity at 300 K for a Si sample doped with 1.0 * 10'4 cm of phosphorous atoms, 8.5 x 1012 cm of arsenic atoms and 1.12 * 10'cm of boron atoms. Assume that the impurities are completely ionized and the mobilities are un = 1500 cm? N.s, up = 500 cm /.s, independent of impurity concentrations. n; = 9.65 * 109 cm in Si at 300 K.

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

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