2.)For the p-type semiconductor doped with Na = 101°cm-3 at T = 300K, no light was applied before t = 0, but light of constant intensity was continuously applied to the entire sample from the moment t = 0. Assuming low - level injection, calculate the change in excess carrier concentration over time when t 2 O and graph it. 균일한 빛 A/ t20 ởnt), opt) ônlt), 8pt)4 (a) (b) Figure (a) excess carrier concentration at t<0 (b) excess carrier concentration change att2 0-

2.)For the p-type semiconductor doped with Na = 101°cm-3 at T = 300K, no light was applied before t = 0, but light of constant intensity was continuously applied to the entire sample from the moment t = 0. Assuming low - level injection, calculate the change in excess carrier concentration over time when t 2 O and graph it. 균일한 빛 A/ t20 ởnt), opt) ônlt), 8pt)4 (a) (b) Figure (a) excess carrier concentration at t<0 (b) excess carrier concentration change att2 0-

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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