This problem concerns the following three samples of silicon, each of which has a different doping level: sample a : 6.25×10^15" cm" arsenic sample b: 10^16 cm boron, 5x10^15 cm phosphorous sample c : intrinsic (no doping) Complete the table like that shown below for these three samples. Assume that at room temperature the electron mobility He is 1600 cm /.s, the hole mobility H, is 600 cm2/V.s, and the intrinsic carrier concentration n, is (1/352) x10^10 cm.a- Find the resistivity in (Ω.cm) of sample a. b- Find the conductivity in (Ω.cm)-1 of sample bc- find the resistivity in (Ω.cm) of sample c.

Delmar's Standard Textbook Of Electricity
7th Edition
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Stephen L. Herman
Chapter1: Atomic Structure
Section: Chapter Questions
Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?
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This problem concerns the following three samples of silicon, each of which has a different doping level: sample a : 6.25×10^15" cm" arsenic sample b: 10^16 cm boron, 5x10^15 cm phosphorous sample c : intrinsic (no doping) Complete the table like that shown below for these three samples. Assume that at room temperature the electron mobility He is 1600 cm /.s, the hole mobility H, is 600 cm2/V.s, and the intrinsic carrier concentration n, is (1/352) x10^10 cm.a- Find the resistivity in (Ω.cm) of sample a. b- Find the conductivity in (Ω.cm)-1 of sample bc- find the resistivity in (Ω.cm) of sample c.

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