determine the fractional of total electrons still in the donor states at T= 300K. Assume Silicon is doped with phosphorous to a concentration of N-1014 cm³. [The ionization energy of donor electrons is 45 meV and Nc=2.8x1019 cm³] 0.029% 0.02% 0.2% 0.04% O O
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- uO 9:.0 A docs.google.com * ZAIN IQ l. Q3/B: Assume an ideal diode model for all the diodes in the circuit below. calculate voltages and currents through D1 and D2 9kQ 1N1199C R2 D1 18KQ 1N1199C D3 1N1199C V2 =12 V R3 1kQ R4 5kQ 1.22 V 11 mA 0.5 A O VD1 ID1 VD2 ID2 صفحة 4 من 6A diode conducts 1mA at 20°C. If it is operated at 100°C, what will be the current? Given data: n=1.74 and NTC value = 2.2mV/°C.Ideally the voltage drop across a conducting diode must be O a. 00 O b. 0 O c. equal to the forward biased voltage O d. higher than the forward biased voltage When the p-n junction diode is forward biased, the width of the depletion region. O a. increases O b. remains Constant O c.increases than Decreases O d. decreases
- A germanium diode has a current reaches 80% ofits saturation point at 115°C. Calculate the voltage and the ratio of the current for a forward bias of 0.8V to the current for the same magnitude in reverse bias when the temperature rises to 165°C.↑ 0000OPOST H.W: Determine v, and the required PIV rating of each diode for the configuration of Figure below Ideal dioden إضافة وصف. . .Consider the following diode circuit. 1kQ Vs 10 Vs VD t(ns) 10 -5 i. Calculate the current at t=0* in the circuit. ii. Calculate lş and IR when the diode is switched off at t=10 ns. Assume Von=0.7 V. i. Write the type of capacitances in a diode.
- Compute the value of DC resistance and AC resistance of a Germanium junction diode at 250C with reverse saturation current, I0 = 25µA and at an applied voltage of 0.2V across the diode.A Si diode has a leakage current Is = 64 nA at room temperature (25°). The leakage current if the temperature increases to 62 °C is nA. No need for a solution. Just write your numeric answer in the space provided. Round off your answer to 2 decimal places.USING D1 1N4001G or SILICON DIODE. To sketch the characteristic curve of the diode you need to vary voltages on diode and measure current flowing during forward and reverse bias condition. Fill up the table below using circuit shown and vary battery voltages. Measure voltage and current of diode then sketch the graph. Voltage X axis and Current Y axis. Battery Diode Diode Voltage Current Voltage Battery Diode voltage Voltage 0.1V 0.3V 0.5V 0.7V 1.0V 2.0V 3.0V 10.0V Diode Current Forward Bias Condition A V 0.1V 0.5V 2.0V 5.0V 10v 20V 25V 30V Reverse Bias Condition Note: used any electronics software to perform this activity
- Calculate the threshold voltage of a silicon diode at a temperature of 0°C if at 25°C. it has a threshold voltage of 0.7 V.Q.5: A Zener diode of a nominal voltage V₂ = 15 V at 30°C temperature. What will be the nominal voltage at 85 °C? Given K₁ = 0.08% / ° C. AcSuppose a drift current density of 2000 A/cm2 exists in the neutral region on the p-type side of a diode that has a resistivity of 2.5 μ·cm. What is the electric field needed to support this drift current density?