Given a silicon sample of unknown doping. Hall measurement provides the following information: W = 1000 mm, A = 2.5 × 10-3cm2, I = 2 10-3 A, magnetic field = 500 Gauss, hall voltage of +150 mV. The majority carrier concentration is (per cm3)

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Chapter12: Electronic Control Devices
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  1. Given a silicon sample of unknown doping. Hall measurement provides the following information: W = 1000 mm, A = 2.5 × 10-3cm2, I = 2 10-3 A, magnetic field = 500 Gauss, hall voltage of +150 mV. The majority carrier concentration is (per cm3)
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