Q3] Find the resistivity at 300 K for a Si sample doped with 1.0x10 cm of phosphorous atoms, 8.5x 10 cm of arsenic atoms and 1.12x10 cm' of boron atoms. Assume that the impurities are completely ionized and the mobilities are H. = 1500 cm V.s, u, concentrations. n =9.65x10° cm in Si at 300 K. = 500 cm V.s, independent of impurity

Q3] Find the resistivity at 300 K for a Si sample doped with 1.0x10 cm of phosphorous atoms, 8.5x 10 cm of arsenic atoms and 1.12x10 cm' of boron atoms. Assume that the impurities are completely ionized and the mobilities are H. = 1500 cm V.s, u, concentrations. n =9.65x10° cm in Si at 300 K. = 500 cm V.s, independent of impurity

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

See similar textbooks

Similar questions

(1-7) Find the concentration of holes and electrons in a p-type Germanium at 300 k, if the conductivity is 100 per ohm per cm. Also find these values of N- type Silicon, if the conductivity of 0.1 per ohm per cm .given for Germanium n-2.5×1013/cm³ Hn=3800 cm2/v-s, up=1800 cm?/v-s, and for Silicon n=1.5x101%cm', Hn=1300 cm²/v-s, µp=500 cm²/v-s
Departments ETC CIMS Determine the current Ir1, Ir2, Ir3 in mA and the voltage across R1 for the network shown in the figure if E=20 V. Assume diode to be Germanium.( R1=5.2kOhm, R2 2.2kOhm, R3=1.8kOhm) RI R2 R3 IR1 IR2 IR3 VR1
Q4/ Find the conductivity of Si that is doped with 2 parts per 108 of donor impurity. Given that there are 5 x 1028 m Si atoms Hn = 0.13 and V. Sec Hp = 0.05 V. Sec
Figure for numbers 1 to 7. Determine the voltage and current of the diode in a) the 1st approximation, b) the 2nd approximation with the diode as silicon, c) the 3rd approximation with an internal resistance of 2 ohms. Provide your answer to each requirement in the google forms provided below. .9 V 5k Ohm 1 k Ohm 220 Ohm
Q1: In common coordinate systems draw the V-A characteristics of Si diode and Ge diode for T=25C.
Figure for numbers 1 to 7. Determine the voltage and current of the diode in a) the 1st approximation, b) the 2nd approximation with the diode as silicon, c) the 3rd approximation with an internal resistance of 2 ohms. Provide your answer to each requirement in the google forms provided below. .9 V 5k Ohm 1k Ohm 220 Ohm
If a Si diode at room temperature (25°) has a leakage current Is = 48 nA, k = 5,800, and VD = 0.53 V, The diode current is_mA. No need for a solution. Just write your numeric answer in the space provided. Round off your answer to 2 decimal places.
_mA. No If a Si diode at room temperature (25°) has a leakage current Is = 46 nA, k = 5,800, and V₁ = 0.65 V, The diode current is need for a solution. Just write your numeric answer in the space provided. Round off your answer to 2 decimal places. Add your answer Short answer. What is the greatest threat to a diode? Use the editor to format your answer Short answer. What type of bias makes a diode act as a closed switch? Use the editor to format your answer
Apply each of diode approximations given the following parameters: D1: Si, rB = 2 Q, rR = 220 k D2: Si, rB = 5Q, rR = 560 k2 and determine the current flowing through D1, D2 and R2, R3, the voltage across R3. %3D %3D Finalize answers as follows: Ideal approx: Id1=_, Id2= _,12= 13=_, V3=, ; 2nd approx: Id1= Id23D 12=_ 13= V3= :3rd approx: Id1= Id2= 12= ,13= _,V3= R1 2.5 kQ D1 D2 R3 2.5 kå 10 V R2 1 kQ
Find the resistivity of a. p-type silicon with NA = 10^10 /cm^3. Determine the value of the concentration of minority charges. CONSTANTS FOR SILICON q= un = Hp = ni = V₂ = 1.6×10-19 C 1350 cm²/Vs 480 cm²/Vs 1.5×10¹⁰ /cm³ 26 mV
The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 × 10-4 s/m. Find the barrier potential at 300°K, if the µn = 2.4µp?
A simple p*n junction is designed to work as IMPATT diode. The doping concentrations in the p* layer is 1019 cm-3 while the doping in the n-layer is 0.7 x1016 Calculate the peak electric field if the breakdown voltage is 80 V and the dielectric constant is 11.9. Express your answer in the unit of kV/cm. cm-3