Engineering Electromagnetics
Engineering Electromagnetics
9th Edition
ISBN: 9780078028151
Author: Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher: Mcgraw-hill Education,
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Chapter 8, Problem 8.19P

Given a material for which ℵK = 3.1 and within which B = 0.4yaz -T, find (a) H; (b) p; (c) u? ;(d) M; (e) J; (f) JB; (g) JT.

Chapter 8, Problem 8.19P, Given a material for which ℵK = 3.1 and within which B = 0.4yaz -T, find (a) H; (b) p; (c) u? ;(d)

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Semiconductor LED's have a slow response time and hence a low frequency operation and low band width because: O a. their produced photons are mainly due to the diffusion process of the injected carriers O b. Their produced photons are due to injected electrons having a low drift velocity only in n-side of the junction Oc Their produced photons are due to injected holes having a low drift velocity only in p-side of the junction O d. Their produced photons are due to injected electrons and holes having a low drift velocity due to low biasing voltage. O e. Non of the given choices is correct.
A Si sample at room temperature is doped wit Np = NA = 1*1014 / cm?. If n; = 1*1010 / cm', and q = 1.6*10 19 C and P, and p, are given at room temperature as shown in the given table: Hp (cm? / V-sec) NA or Np (cm-) 1X 1014..... 2 1358 1357 1352 461 460 459 458 5 1X 1015..... 1345 1332 1298 455 448 5 !X 1016..... 1248 1165 986 801 437 419 5 1X 1017.. 378 331 Then the conductivity of the sample is: o = 7.37*10 (0.cm) '. • a. 2.9*10 (N.cm)1. b. o = 2.17*102 (0.cm)'. C. O = 2.9*102 (N.cm)1.
A Si sample at room temperature is doped wit Np = NA = 1*1014 / cm?. If n; = 1*1010 / cm?, and q = 1.6*10 19 C and Pn and p, are given at room temperature as shown in the given table: Hn Hp NA or Np (cm-3) 1X 1014.. . . 2 (cm? / V-sec) 1358 1357 461 1352 1345 460 459 458 5 1X 1015. . 2 1332 455 5 1X 1014 ..... 2 1298 1248 1165 986 448 437 419 378 331 5 1X 1017..... 801 Then the conductivity of the sample is:

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