1. Consider a contact between Al and n-type Si doped at N=10¹ cm³. T=300K. In this case, the effective density of states in conduction band is N-2.8X10¹ cm. a. Draw the energy-band diagrams of the two materials before the junction is formed. b. Draw the ideal energy band at zero bias after the junction is formed. Calculate Dao. Xa, and Emax for part (b). d. Repeat parts (b) and (c) using the data in the figure. c. Barrier height, e (CV) 1.0 0.8 0.6 04- 0.2 3.0 GaAs Si Mg Al Ag W L 4.0 Au Pd 1 5.0

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1. Consider a contact between Al and n-type Si
doped at N=10¹6 cm³. T-300K. In this case,
the effective density of states in conduction
band is N=2,8X10¹ cm³.
a. Draw the energy-band diagrams of
the two materials before the junction
is formed.
b. Draw the ideal energy band at zero
bias after the junction is formed.
Calculate DBO, Xd. and Emax for part
(b).
c.
d. Repeat parts (b) and (c) using the
data in the figure.
Barrier height, ex (CV)
1.0
0.8 GaAs
0.6
0,52
0.4
0.2
3.0
Si
Mg
Al Ag W
11
Au
Pd
11
4,0
5.0
Metal work function, ed (eV),
Pt
6.0
Transcribed Image Text:1. Consider a contact between Al and n-type Si doped at N=10¹6 cm³. T-300K. In this case, the effective density of states in conduction band is N=2,8X10¹ cm³. a. Draw the energy-band diagrams of the two materials before the junction is formed. b. Draw the ideal energy band at zero bias after the junction is formed. Calculate DBO, Xd. and Emax for part (b). c. d. Repeat parts (b) and (c) using the data in the figure. Barrier height, ex (CV) 1.0 0.8 GaAs 0.6 0,52 0.4 0.2 3.0 Si Mg Al Ag W 11 Au Pd 11 4,0 5.0 Metal work function, ed (eV), Pt 6.0
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