1. Consider a contact between Al and n-type Si doped at N=10¹ cm³. T=300K. In this case, the effective density of states in conduction band is N-2.8X10¹ cm. a. Draw the energy-band diagrams of the two materials before the junction is formed. b. Draw the ideal energy band at zero bias after the junction is formed. Calculate Dao. Xa, and Emax for part (b). d. Repeat parts (b) and (c) using the data in the figure. c. Barrier height, e (CV) 1.0 0.8 0.6 04- 0.2 3.0 GaAs Si Mg Al Ag W L 4.0 Au Pd 1 5.0

A germanium pn junction diode was fabricated on a wafer with doping concentration of 7.8 x 105 cm3. The p-region was created by doping 1018 cm using ion-implantation. Compute the following: barrier potential ii. i. depletion width at the junction. If this diode has saturation current Io-15 nA at 300 K, what is the diode current if potential across the diode is 0.8 V (n=1). 111.

Please Help ASAP!!! Just do A-C

Intrinsic carrier concentration of pure silicon at 300 K will be .................?