The equation Jn=qnµ„E (A/cm²) represents.

In a Ragone plot, which technology has the greatest specific energy   A. Super-Capacitors   B. Ni-Cd batteries   C. lead acid batteries   D. Li-ion batteries

ödalg äbäi The carrier effective masses in a semiconductor are mn*= 1.21 mo and mp*= 0.70 mo. Determine the position of the intrinsic Fermi level with respect to the center of the bandgap at .T= 300 K -1.063 meV O 10.63 meV O -10.63 meV O 1.063 meV O

IMG 2839.HEIC Find Potential charge on each Capacitor: 1ME C2 10MF. 10MF 1.5V

The Fermi energy is 0.30 eV below the conduction band energy Ec at T = 400K. The value of Nc for silicon at 300K is Nc = 2.8x1019 cm 3. Calculate the thermal equilibrium electron concentration at T = 400K. O no = 2.17 X 1017 cm-3 O no = 2.24 X 1019 cm-3 no = 7.21 X 1015 cm-3 no = 4.31 X 101⁹ cm-3

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SEMICONDUCTOR DEVICES   n-type silicon sample with a donor impurity concentration of 2x1015 cm–3 is converted into p-type by gallium (Ga) diffusion so that resistivity at T= 80 °C is (100/48) Ω.cm. µp (80 °C) =300 cm2/V.s, µn (80 °C) =900 cm2/V.s and ni (80 °C) = 3x1011 cm–3. Calculate the hole concentration after converting into p-type?

The Fermi level of an n-type Si is 0.15 eV below the conduction band edge. What is the approximate electron concentration (cm-)? (Assume the band gap energy of Si is 1.1 eV at 300 K. nj = 1.5x1010 cm-3. Kg=1.38x10-23 J/K) (Please round up the answer to 3 decimal places.) Please choose one: a) 04.541 x 1016 b) 02.564 x 1017 c) 07.644 x 1016 d) 03.584 x 1017