Physics for Scientists and Engineers with Modern Physics
Physics for Scientists and Engineers with Modern Physics
10th Edition
ISBN: 9781337553292
Author: Raymond A. Serway, John W. Jewett
Publisher: Cengage Learning
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Chapter 42, Problem 40AP
To determine

To prove that U0=αkee2r0(11m).

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You are tutoring a bright student in his last semester of introductory physics. The particular topic of the day is bonding in solids. When your session begins, the student hands you a slip of paper with the following equation printed on it: U, = -ak, 1 m He says that he found this equation in his online studying and that it is described as an expression for the ionic cohesive energy of a crystal formed by ionic bonding. He asks you to derive this equation.
In solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.
In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…
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