Physics for Scientists and Engineers with Modern Physics
10th Edition
ISBN: 9781337553292
Author: Raymond A. Serway, John W. Jewett
Publisher: Cengage Learning
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Question
Chapter 42, Problem 19P
(a)
To determine
The typical speed of
(b)
To determine
Compare the typical drift speed of the electrons in wire of
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In an N-type semiconductor at T = 300 K, the electron concentration varies linearly from 2 x 10^18 to 5 X 10^17 per cc over a distance of 1.5 mm and the diffusion current density is 360 A/cm^2. Find the mobility of electrons.
Assume that the conductivity of a pure
semiconductor at an applied electric field of 450
mV/m is 2.75 X 1013/ S2-cm.
Given that the drift velocity of electrons is 0.135 m/s
and that of holes is 0.048 m/s, determine the density
of the charge carriers per cubic meter in this material.
. Mobility of electrons in a semiconductor is defined as the
ratio of their drift velocity to the applied electric field. If for
an n-type semiconductor, the density of electrons is 10¹⁹ m-³
and their mobility is 1.6 m² (V-s), then the resistivity of the
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2
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Chapter 42 Solutions
Physics for Scientists and Engineers with Modern Physics
Ch. 42.1 - For each of the following atoms or molecules,...Ch. 42.2 - Prob. 42.2QQCh. 42.2 - Prob. 42.3QQCh. 42 - Prob. 1PCh. 42 - Prob. 2PCh. 42 - Prob. 3PCh. 42 - Prob. 4PCh. 42 - Prob. 5PCh. 42 - The photon frequency that would be absorbed by the...Ch. 42 - Prob. 8P
Ch. 42 - Prob. 9PCh. 42 - Prob. 10PCh. 42 - (a) In an HCl molecule, take the Cl atom to be the...Ch. 42 - Prob. 12PCh. 42 - Prob. 13PCh. 42 - Prob. 14PCh. 42 - Prob. 15PCh. 42 - Prob. 16PCh. 42 - Prob. 17PCh. 42 - Prob. 19PCh. 42 - Prob. 21PCh. 42 - Prob. 22PCh. 42 - Prob. 23PCh. 42 - Prob. 24PCh. 42 - Prob. 25PCh. 42 - Prob. 26PCh. 42 - Prob. 27PCh. 42 - Prob. 28PCh. 42 - Prob. 29PCh. 42 - Prob. 30PCh. 42 - Prob. 32PCh. 42 - Prob. 33PCh. 42 - Prob. 35PCh. 42 - Prob. 36APCh. 42 - Prob. 37APCh. 42 - Prob. 39APCh. 42 - Prob. 40APCh. 42 - As an alternative to Equation 42.1, another useful...
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- Q 2/ If the electron density of a pure semiconductor at a temperature of 17 C is m3/1016, and when the temperature increases by ten times, the electron density becomes m3/1019. If impurities of arsenic are added to one end of this material, the concentration of the majority charge carriers becomes m3/1023, and impurities of boron are added to the other end, so that the concentration of the majority charge carriers becomes m3/1021, thus forming a p-n junction with a contact area of 10-7 m2. Calculate what I am at 17.C 1- Fermi position at each end 2- Energy gap in ev 3- The ratio of the current of holes to the current of electrons through the junction if you know that the mobility of electrons is m/Vs 0.5 and the mobility of holes is m/Vs 0.25 and the length of the minority electrons is 0.4 mm and the length of the minority holes is 0.3 mm 4- Density of carriers for each party (majority and minority) 5- The effort of the divider 6- The junction current at an amplitude of 0.4 7- The…arrow_forwardAn n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.arrow_forwardGiven the fermi energy and electron concentration 7.00 eV and 8.0×10²6 e¯/m³ respectively of a Copper of resistivity 1.7×108 2-m, calculate the mean free path. (a) 3780 nm (b) 5000 nm (c) 4100 nm (d) 7000 nmarrow_forward
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