Physics of Everyday Phenomena
Physics of Everyday Phenomena
9th Edition
ISBN: 9781259894008
Author: W. Thomas Griffith, Juliet Brosing Professor
Publisher: McGraw-Hill Education
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Chapter 21, Problem 20CQ
To determine

Whether a diode be made from material that is doped with just One Type of impurity atom and explain the reason.

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1. The energy of an electron in the valence band of a semiconductor is described by E = - Ak? where the value of A is 10-37 J m2, with E in J and k in m-1. When an electron is removed from the state k = 10°k, m-1, calculate: (a) the effective mass; (b) the momentum; (c) and the velocity of the resultant hole.
3) For a Ge (not Si) p-n junction with Na = 1016cm-3 and Na = 1017cm-3, the peak electric field in the junction at breakdown is 2 × 105 V/cm. a) Determine the depletion zone width for this peak electric field. b) Calculate the reverse bias breakdown voltage of the diode. Hint: the built-in potential is needed to obtain an accurate result. c) What can be done to which doping level to approximately double the breakdown voltage? Explain.
A b A 16% O 12:47 4G 3G When the forward bias voltage of a diode is changed form 0.6V to 0.8V, the current changes form 5 mA to 15 mA. Then its forward bias resistance is A. 0.02 2 В. 10 0 С. 20 0 D. 0.20 N A C В CLEAR MY CHOICE
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