(a) Interpretation: The valence band, conduction band, and band gap should be determined. Concept introduction: The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

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Answer 1

Question

Chapter 12, Problem 12.23CP

Interpretation Introduction

(a)

Interpretation:

The valence band, conduction band, and band gap should be determined.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(b)

Interpretation:

The electron population change when silicon is doped with gallium should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(c)

Interpretation:

The electron population change when silicon is doped with arsenic should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(d)

Interpretation:

The electrical conductivity of doped silicon semiconductor with pure silicon should be compared.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher

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Answer 2

Question

Chapter 12, Problem 12.23CP

Interpretation Introduction

(a)

Interpretation:

The valence band, conduction band, and band gap should be determined.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(b)

Interpretation:

The electron population change when silicon is doped with gallium should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(c)

Interpretation:

The electron population change when silicon is doped with arsenic should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(d)

Interpretation:

The electrical conductivity of doped silicon semiconductor with pure silicon should be compared.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher

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Answer 3

Question

Chapter 12, Problem 12.23CP

Interpretation Introduction

(a)

Interpretation:

The valence band, conduction band, and band gap should be determined.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(b)

Interpretation:

The electron population change when silicon is doped with gallium should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(c)

Interpretation:

The electron population change when silicon is doped with arsenic should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(d)

Interpretation:

The electrical conductivity of doped silicon semiconductor with pure silicon should be compared.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher

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Answer 4

Question

Chapter 12, Problem 12.23CP

Interpretation Introduction

(a)

Interpretation:

The valence band, conduction band, and band gap should be determined.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(b)

Interpretation:

The electron population change when silicon is doped with gallium should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(c)

Interpretation:

The electron population change when silicon is doped with arsenic should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(d)

Interpretation:

The electrical conductivity of doped silicon semiconductor with pure silicon should be compared.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher

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Answer 5

Chapter 12, Problem 12.23CP

Interpretation Introduction

(a)

Interpretation:

The valence band, conduction band, and band gap should be determined.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(b)

Interpretation:

The electron population change when silicon is doped with gallium should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(c)

Interpretation:

The electron population change when silicon is doped with arsenic should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Interpretation Introduction

(d)

Interpretation:

The electrical conductivity of doped silicon semiconductor with pure silicon should be compared.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher

Answer 6

Chapter 12, Problem 12.23CP

Interpretation Introduction

(a)

Interpretation:

The valence band, conduction band, and band gap should be determined.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Answer 7

Chapter 12, Problem 12.23CP

Interpretation Introduction

(a)

Interpretation:

The valence band, conduction band, and band gap should be determined.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Answer 8

Interpretation Introduction

(b)

Interpretation:

The electron population change when silicon is doped with gallium should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Answer 9

Interpretation Introduction

(b)

Interpretation:

The electron population change when silicon is doped with gallium should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Answer 10

Interpretation Introduction

(c)

Interpretation:

The electron population change when silicon is doped with arsenic should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Answer 11

Interpretation Introduction

(c)

Interpretation:

The electron population change when silicon is doped with arsenic should be shown.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.

Answer 12

Interpretation Introduction

(d)

Interpretation:

The electrical conductivity of doped silicon semiconductor with pure silicon should be compared.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher

Answer 13

Interpretation Introduction

(d)

Interpretation:

The electrical conductivity of doped silicon semiconductor with pure silicon should be compared.

Concept introduction:

The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher

Answer 14

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Answer 17

Ch. 12 - Calcium metal crystallizes in a cubic...Ch. 12 - Polonium metal crystallizes in a simple cubic...Ch. 12 - Polonium metal crystallizes in a simple cubic...Ch. 12 - The density of a sample of metal "as measured to...Ch. 12 - Zinc sulfide crystallizes in the following cubic...Ch. 12 - Prob. 12.6A Ch. 12 - Prob. 12.7P Ch. 12 - Prob. 12.8A Ch. 12 - Prob. 12.9P Ch. 12 - Prob. 12.10A

Solution Summary: The author explains that the band theory is used to explain hardness, electrical conductivity, melting point for different metals.

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