Ex 3.4: The transistor in Figure 3.26(a) has parameters VTP = -0.6 V and Kp = 0.2 mA/V². The circuit is biased at VDD = 3.3 V. Assume R₁|| R2 = 300 k. De- sign the circuit such that IDQ = 0.5 mA and VSDQ = 2.0 V. (Ans. R₁ = 885 kn, R2 454 ks, RD = 2.6 ks) R₁₁ VG ww R₂ +VDD www VSG + RD (a) + ID VSD D

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Ex 3.4: The transistor in Figure 3.26(a) has parameters VTP = -0.6 V and Kp =
0.2 mA/V². The circuit is biased at VDD = 3.3 V. Assume R₁|| R2 = 300 k. De-
sign the circuit such that IDQ = 0.5 mA and VSDQ = 2.0 V. (Ans. R₁ = 885 kn,
R2 454 ks, RD = 2.6 ks)
Transcribed Image Text:Ex 3.4: The transistor in Figure 3.26(a) has parameters VTP = -0.6 V and Kp = 0.2 mA/V². The circuit is biased at VDD = 3.3 V. Assume R₁|| R2 = 300 k. De- sign the circuit such that IDQ = 0.5 mA and VSDQ = 2.0 V. (Ans. R₁ = 885 kn, R2 454 ks, RD = 2.6 ks)
R₁₁
VG
ww
R₂
+VDD
www
VSG
+
RD
(a)
+
ID
VSD
D
Transcribed Image Text:R₁₁ VG ww R₂ +VDD www VSG + RD (a) + ID VSD D
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