a) For the given silicon semiconductor resistance of radius =1mm and height 100mm, shown below, find the electric current, I. Consider silicon at T= 300K doped with phosphorus atoms at a concentration of ND= 1.5 x 1010 cm. Assume mobility values of un = 1350 cm/N-s and up =480 cm2/V-s. Assume the applied voltage, V=5V. [Given Band Eg for silicon are 5.23 x 1015 cm3 K 3/2 and 1.1 eV respectively, and q=1.6x10 19 C, K-86x106, mm- 10 m] b) If the temperature is increased to 350K, what the battery voltage value needed to keep the same current value as in (a). O Find the majority and minority carrier concentration values at T=350K.

a) For the given silicon semiconductor resistance of radius =1mm and height 100mm, shown below, find the electric current, I. Consider silicon at T= 300K doped with phosphorus atoms at a concentration of ND= 1.5 x 1010 cm. Assume mobility values of un = 1350 cm/N-s and up =480 cm2/V-s. Assume the applied voltage, V=5V. [Given Band Eg for silicon are 5.23 x 1015 cm3 K 3/2 and 1.1 eV respectively, and q=1.6x10 19 C, K-86x106, mm- 10 m] b) If the temperature is increased to 350K, what the battery voltage value needed to keep the same current value as in (a). O Find the majority and minority carrier concentration values at T=350K.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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