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Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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
Transcribed Image Text:4. Gallium arsenide has a dielectric constant equal to 10.4.
a) Determine the donor and acceptor ionization energies.
b) Calculate the Bohr radii for bound electrons and holes.
c) Calculate the temperature at which freeze-out begins to take place in an n-type
sample.
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- 3) A GaAs semiconductor is doped n-type ND-3x10¹6 cm ³. Within the band gap of the material are 8x10¹5 cm ³ donor defects located energetically below the Fermi level such that only 75% of those defects are populated with carriers. 3a. Are the minority carriers electrons or holes for this material? 3b. What is the total free carrier concentration of this GaAs material? 3c. Where is the Fermi Level for this material relative to the conduction band? 3d. Where is the donor defect trap located relative to the conduction band? 3e. What wavelength of light would be needed to excite trapped charge from the above mentioned defect site to the conduction band?arrow_forward. a) Calculate the intrinsic carrier concentration in silicon at (i) T = 250 K and (ii) T = 350 K. (b) Repeat part (a) for gallium arsenide.arrow_forwardHand write, more details . As soon as possiblearrow_forward
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