Consider a gallium arsenic (GaAS) sample at T=300 K,with doping concentrations of NA=1017 cm-3 and ND=0. Assume complete ionization: a) Calculate the drift current density if the applied electric field is E=10 V/cm. b) Calculate the resistivity of the semiconductor.

Consider a gallium arsenic (GaAS) sample at T=300 K,with doping concentrations of NA=1017 cm-3 and ND=0. Assume complete ionization: a) Calculate the drift current density if the applied electric field is E=10 V/cm. b) Calculate the resistivity of the semiconductor.

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

See similar textbooks

Related questions

Q: An ideal rectifying contact is formed by depositing gold (m = 5.10 cV) on an Np - 10-/cm doped…

Q: Calculate the indium content of an InGaAs ternary compound semiconductor using a linear…

A: please rate meplease rate meplease rate meplease rate meplease rate meplease rate meplease rate…

Q: A phosphorus- doped silicon wafer for an electrical component has an electrical resistivity of 8.33…

Q: Consider a gallium arsenide sample at T= 300 K with doping concentrations of Na =Q and Na 1016 cm3.…

Q: n-type semiconductor sample has an electron density of 6.25x10^18/cm^3 at 300K.If the additive-free…

A: Solution :- As per mass action law :- np=n2i where n is the concentration of electron in n type…

Q: 3. Consider two bulk semiconductors with the same band gap energy and matrix elements but different…

A: Answer -

Q: Calculate the drift current density in a semiconductor for a given electric field. Consider a…

Q: We inject electrons into a p-type semiconductor 5 microns long such that the concentration varies…

A: Diffusion current is the movement of holes and electrons from high-concentration locations to…

Q: Consider a silicon pn junction at T 300 K. Assume the doping concentration in the n region is 1020…

Q: 2. The dc block charge diagram of an ideal MOS capacitor is shown. (a) Is the semiconductor…

Q: Q3:- A bar of p-type silicon, has a cross-sectional area A =106 cm? and a length L= 1.2x103 cm. For…

Q: Consider a silicon pn junction at T 300 K. Assume the doping concentration in the n region is…

Q: An ntype semiconductor sample has an electron density of 6.25 x 10^18 / cm^3 at 300K. In this…

A: For n type semiconductor Mass action law is np=ni^2 So Hole concentration given by p= ni^2/n Here…

Q: QUESTION Consider a uniformly doped silicon p'-n junction with acceptor concentration of 7x10“ cm',…

A: Given data is- In the N- region Na1=7×1014 cm-3Na1=7×108 m3Na2=15×10-6 m In P- region Nd=5×10-6 m…

Q: QUESTION An abrupt junction exists between p andn material in silicon. The acceptor 3 doping level…

A: Given data ni=1012 cm-3 Pp0=NA=1017 cm-3nn0=ND=1017 cm-3Pn0=1012 cm-3 (a) Formula for np0 is given…

Q: 6.) The equilibrium electron concentration in GaAs at T = 375 K is 3.0 × 10¹6 cm -3 (a) Determine…

Q: Q: P. type semiconductor with length (= 5mm), the cross-section area of (A= 0.5 mm²), and resistance…

A: From the given data such as resistance length area and intrinsic carrier concentration and mobility…

Q: 5) Germanium doped with 1034 m³ Al atoms is a semi-conductor at room temperature and each Al atom…

A: We need to tell about the type of semiconductor and conductivity of the semiconductor. We know…

Q: Assume that the conductivity of a pure semiconductor at an applied electric field of 450 mV/m is…

A: The data given in the question are: E=450mV/m, σ=2.75×1013/Ω-cm, vd(e)=0.135m/s, vd(holes)=0.048m/s…

Q: A Silicon bar having a length of 4μm, doped with n-type at 10"/cm", calculate the current density…

A: Given,Length, l=4μmConcentrationof n-type material, n=1017/cm3Applied voltage, V=2VCross-sectional…

Q: 1. Plot the characteristic curve of the Zener dioden the forward region from the result which…

Q: Consider a gallium arsenide sample at T= 300 K with doping concentrations of Na =Q and Na- 1016 cm…

Q: 1- Why do we need to know that Moor's law is important for semiconductors fabrication? 2- Density of…

A: 1) Moore's law states that number of Transistors on chip gets double in every 18 months

Q: H.W5: If the ratio of mopility of electrons to mopility of holes is 3:1 and the condicutivity of…

Q: PROBLEM 1 Calculate the drift current density in a semiconductor for a given electric field.…

A: Since electrons and holes ionize fully their density will also be equal and thus we have:…

Q: A uniform bar of n-type silicon of 2 um length has a voltage of 1.75V applied across it. If No - 1.0…

A: Since you have posted a question with multiple sub-parts, we will solve first three sub-parts for…

Q: A silicon material is doped 2.25 x 10 ^ 15 atoms / cm ^ 3 with an element from the group 5a. At T =…

Q: Consider the above semiconductor structure, where Al is alloyed into an n-type Si sample with…

A: Given data is Nd=1016 cm-3,Na=4×1018 cm-3 Assume ηi=1.5×1010 cm-3 ε=ε0εr=8.854×10-12×11.8 F/cm…

Q: At 300K, fermi level is found to be 0.2eV below the edge of conduction band for an n-type silicon…

A: First we will find out electron concentration in both cases then we will find out type and…

Q: Q: P. type semiconductor with length (1= 5mm), the cross-section area of (A= 0.5 mm²), and…

Q: There is a p-type semiconductor box. As the voltage at both ends of the box continued to increase,…

A: P-Type semiconductor That type semiconductor device which containing more number of holes as the…

Q: b) Calculate the drift velocity of electrons in silicon at room temperature and when the magnitude…

A: In this question we will find drift velocity of electrons...

Q: Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is 1020…

A: We need to find out the minorities carrier density for given diode .

Q: 4.32: For the Boltzmann approximation to be valid for a semiconductor, the Fermi level must be at…

A: GIVEN: fermi level must be at least 3kT below the donor level in n-type material fermi…

Q: Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to…

A: For the above given data T = 300k electron concentration = 1015 cm-3 the hole diffusion current…

Q: 5) Germanium doped with 1024 m³ Al atoms is a semi-conductor at room temperature and each Al atom…

A: a) aluminium is a trivalent impurities.so when Ge doped with aluminium makes the semiconductor is a…

Q: Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is…

A: We need to find out minority charge carrier density for given diode .

Q: For a P-type semiconductor with length of 55mm, the cross-section area of 0.55mm2, and resistance of…

Q: Given a semiconductor band structure E-k diagram as below. For point A, B, and C: (a) compare the…

Q: What is effective mass? Derive an expression for the effective mass in semiconductors. On an E-k…

A: Here I have solved it.

Q: QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n- type…

A: Given Na=0Nc=Nv=1.5×1019 cm-3T=400k

Concept explainers

Types of Charge Carriers

A carrier is a type of object which carries a particular thing from one point to another point. For instance, people use different vehicles from one place to another, and the vehicle carries those people and acts as a carrier.

Question

Consider a gallium arsenic (GaAS) sample at T=300 K,with doping concentrations of N_A=10¹⁷ cm^-3 and N_D=0. Assume complete ionization:

a) Calculate the drift current density if the applied electric field is E=10 V/cm.

b) Calculate the resistivity of the semiconductor.

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step 3

VIEW

Step by step

Solved in 3 steps with 1 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Types of Semiconductor Material and Its Energy Band Analysis

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

QUESTION 1 a) b) c) Define briefly the terms ionization and electron-hole pair (EHP). Draw the energy band diagram of metal, semiconductor and insulator. Discuss on how the energy gap affect their conductivity. Sketch the current-voltage characteristic of Si diode.
2. A silicon specimen is doped with 4.73 x1010/cm³ Antimony and 3.57x101%cm³ Aluminum. a) Calculate free electron and hole #Icm³ concentrations. b) Determine specimen conductivity type (n or p).
At 305 °K temperature, the voltage equivalent of temperature of diode is ______________________V. Assume the Boltzmann's constant is 8.62*10-5 eV / K Answer:
(b) Describe the formation of an n-type extrinsic semiconductor by using a suitable example of materials.
The contact potential difference of a metal-n type semiconductor Schottky diode is 0.6 Volts. For V = 0 (balance), V = 0.2 Volt (Straight supply), V = 2 Volt (Reverse supply) respectively: a) Calculate the width of the joint area. b) Draw the energy band diagram of the diode for each case. (Show the values you have given and found on the drawing.) (For the semiconductor, donor concentration is 1016 cm-3 and dielectric permeability 1.1x10-10 F/ m take.)
Q. Calculate the hole and electron densities in a N-type germaniumsemiconductor at room temperature. The conductivity of semiconductor bar is 500 S/cm. The mobility of electrons and holes at room temperature for germanium is 3800 cm2/ Vs and 1800 cm2/ Vs respectively and ni= 2.5 × 1013/cm3.
Take a diode formed by the junction of two type n and p semiconductors. In the figure below is the diagram of the energy bands of these semiconductors, (remember the concept of fermi energy, and knowing that for a pure semiconductor it is in the middle). Based on the figures below, answer a) What is the possible current direction in the direction from p to n or from n to p? b) Explain why the current flow occurs only in one direction.
Problem 2 In a P-type semiconductor. the Fermi level is 0.3 cV above the valance band at a room temperature of 30O °K. Determine the new position of the Fermi level for termperatures of (a) 350 K and (b) 400 K. The Fermi level in a P-type material is given by
QUESTION 1 Provide an example each for a trivalent and pentavalent element. Describe the doping process of Silicon (Si) to obtain p-type and n-type semiconductor material. a) b) c) Explain forward bias and reverse bias conditions of an ideal p-n junction diode. Sketch the I-V characteristic of Si and Ge diode. Discuss why Si based semiconductor is move favored in production of solid state devices.
1. Answer the following with "TRUE" or "FALSE" then explain why. ________a.) Charges choose the path of least resistance. Given a resistor in parallel with a diode, no current willflow through the resistor when the applied voltage exceeds the diode’s forward voltage.________b.) Since diodes are unidirectional components, it will always block AC signals e.g. pulse train,sawtooth, triangular signals.________c.) Silicon diodes typically have a forward voltage of 0.7V.
a) Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0 K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material. b)Explain what n and p-type semiconductors are using their band structures.
Compare the temperature dependence of the conductivity for metals and intrinsic semiconductors. Briefly explain the difference in behavior.