on of x which must exist in the semiconductor. 4 16 The total current in a semiconductor is constant and equal to J--10 A/cm. The total current is composed of a hole drift current and electron diffusion current. Assume that the hole concentration is a constant and equal to 10" cm and assume that the elec- tron concentration is given by n(x) tron diffusion coefficient is D,= 27 cm/s and the hole mobility is a, = 420 cm'/V-s. Calculate (a) the electron diffusion current density for x>0, (b) the hole drift current density for x> 0, and (c) the required electric field for x>0. = 2x 10"e/k cm where L 15 um. The elec-

Introductory Circuit Analysis (13th Edition)
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LCIE un Cu as a tunction of x which must exist in the semiconductor.
s 36 The total current in a semiconductor is constant and equal to J=
current is composed of a hole drift current and electron diffusion current. Assume that
the hole concentration is a constant and equal to 10" cmand assume that the elec-
tron concentration is given by n(x) = 2 x 10e cm where L =
tron diffusion coefficient is D.= 27 cm/s and the hole mobility is u,
Calculate (a) the electron diffusion current density for x>0, (b) the hole drift current
density for x> 0, and (c) the required electric field for x>0.
10 A/em. The total
15 um. The elec-
420 cm/V-s.
%3D
Transcribed Image Text:LCIE un Cu as a tunction of x which must exist in the semiconductor. s 36 The total current in a semiconductor is constant and equal to J= current is composed of a hole drift current and electron diffusion current. Assume that the hole concentration is a constant and equal to 10" cmand assume that the elec- tron concentration is given by n(x) = 2 x 10e cm where L = tron diffusion coefficient is D.= 27 cm/s and the hole mobility is u, Calculate (a) the electron diffusion current density for x>0, (b) the hole drift current density for x> 0, and (c) the required electric field for x>0. 10 A/em. The total 15 um. The elec- 420 cm/V-s. %3D
Expert Solution
Step 1

Given 

Current density J =-10 A/cm

Concentration of hole p= 1016 cm-3 

Concentration of electron n(x) =2*1015 *ex/L cm-3 

Electron diffusion coefficient Dn = 27 cm/s

Hole mobility μp= 420 cm/V-s

Formula for electron diffusion current density 

Jn = e. DndndxJn= 1.602*10-19*27*d2*1015*ex15*10-6dx= 57.34*10-4dex15*10-6dx=382.32*ex15*10-6

 Jn= 3.8232 A/cm2

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