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An N-type silicon sample has a uniform density Nd = 10^17cm^–3 of arsenic, and a P-type sample has Na = 10^15cm^–3. A third sample has both impurities present at the same time. (a) Find the equilibrium minority carrier concentrations at 300 K in each sample. (b) Find the conductivity of each sample at 300 K. (c) Find the Fermi level in each material at 300 K with respect to either the conduction band edge (Ec) or the valence band edge (Ev).

An N-type silicon sample has a uniform density Nd = 10^17cm^–3 of arsenic, and a P-type sample has Na = 10^15cm^–3. A third sample has both impurities present at the same time. (a) Find the equilibrium minority carrier concentrations at 300 K in each sample. (b) Find the conductivity of each sample at 300 K. (c) Find the Fermi level in each material at 300 K with respect to either the conduction band edge (Ec) or the valence band edge (Ev).

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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An N-type silicon sample has a uniform density Nd = 10^17cm^–3 of arsenic, and a P-type
sample has Na = 10^15cm^–3. A third sample has both impurities present at the same time.
(a) Find the equilibrium minority carrier concentrations at 300 K in each sample.
(b) Find the conductivity of each sample at 300 K.
(c) Find the Fermi level in each material at 300 K with respect to either the conduction
band edge (Ec) or the valence band edge (Ev).

Mobility (cm²/V.s) 1600 1400 Мп Мр 1200 1000 800 600 400 200 0 1014 1015 1016 1017 1018 Na + Nd (ions/cm³) 1019 1020
Transcribed Image Text:Mobility (cm²/V.s) 1600 1400 Мп Мр 1200 1000 800 600 400 200 0 1014 1015 1016 1017 1018 Na + Nd (ions/cm³) 1019 1020
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