= 1001) Use the Ebers-Moll model to determine Ic for an NPN BJT biased at IBnA and VCE 0.10 V. Assume that the Ebers-Moll model parameters are2.25x10-16A,a. IFOb. IRO 8.95×10-16A, and=c. αF 0.994.2) Calculate BR and BF for a bipolar transistor described by an Ebers-Moll modelwitha. IFO 1.45 x10 16A,b. IRO 5.77x10-16A andc. αF 0.995

Given data,Asked to determine IC=?Note: “Since you have posted multiple questions, we will provide…

1) Use the Ebers-Moll model to determine Ic for an NPN BJT biased at IB = 100 nA and VCE 0.10 V. Assume that the Ebers-Moll model parameters are a. IFO 2.25 x10-16A, b. IRO 8.95×10-16A, and = c. αF 0.994.

1) Use the Ebers-Moll model to determine Ic for an NPN BJT biased at IB = 100 nA and VCE 0.10 V. Assume that the Ebers-Moll model parameters are a. IFO 2.25 x10-16A, b. IRO 8.95×10-16A, and = c. αF 0.994.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

= 100
1) Use the Ebers-Moll model to determine Ic for an NPN BJT biased at IB
nA and VCE 0.10 V. Assume that the Ebers-Moll model parameters are
2.25x10-16A,
a. IFO
b. IRO 8.95×10-16A, and
=
c. αF 0.994.
2) Calculate BR and BF for a bipolar transistor described by an Ebers-Moll model
with
a. IFO 1.45 x10 16A,
b. IRO 5.77x10-16A and
c. αF 0.995

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