please show clear work 1.13 Boron atoms are added to a Si film resulting in an impurity density of 4 × 1016 cm³.(a) What is the conductivity type (N-type or P-type) of this film?(b) What are the equilibrium electron and hole densities at 300 K and 600 K?(c) Why does the mobile carrier concentration increase at high temperatures?(d) Where is the Fermi level located if T = 600 K?

FINAL ANSWER: I have provided all the answers in the below steps. Thank YouExplanation:STEP−1 a)…

Answered: 1.13 Boron atoms are added to a Si film…

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

See similar textbooks

Similar questions

Where is the Fermi-level of a boron doped Si semiconductor at 77 K, 300 K, and 600 K at full activation of dopants? The Fermi-level shall be related to the intrinsic Fermi-level Ej. (NA = 107 cm3, Eg(Si) = 1.12 ev, m,* = 0.3mo, m,* = 0.5mo.) Sketch the solution.
Problem 2 In a P-type semiconductor. the Fermi level is 0.3 cV above the valance band at a room temperature of 30O °K. Determine the new position of the Fermi level for termperatures of (a) 350 K and (b) 400 K. The Fermi level in a P-type material is given by
The figure given below represents the energy-band diagram in the p-type semiconductor of a MOS capacitor, indicating surface potential as 0.254 V and the space charge width is 0.30 µm. Then the acceptor doping concentration is x 10¹5 cm-3. (Assume Esi = 11.7 &&0 8.85 x 10-14 F/cm). Os = 0.254 V oxide Xd 0.30 μm p-type E Efi EF MM Ev
a) Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0 K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material. b)Explain what n and p-type semiconductors are using their band structures.
Silicon is doped with boron to a concentration of 4×1010 atom/cm3.assume the intrinsic 1.5×1010 /cm3 and the value of kT/q to be 25 mV at 300 K. Compared to the undoped silicon, The Fermi level of doped silicon (a) Goes down by 0.13 eV (b) Goes up by 0.13 eV (c) Goes down by 0.427 eV (d) Goes up by 0.427 eV
Silicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity? Find the electron and hole concentrations at 300 K. Is this material n-type or p-type? Find the electron and hole mobilities. What is the resistivity of the material?
Subject - Semi Conductor's At 300K, fermi level is found to be 0.2eV below the edge of conduction band for an n-type silicon semiconductor. Find the electron and hole concentrations. After doping again, fermi level is now founded 0.25eV below the edge of conduction band. Find the type and concentration of impurity atoms added at the later stage At 300K, Nc= 2.8x 1019 cm3
Q7/ Silicon has a conductivity of 5 x 10- (N.m)- when pure. How many indium atoms/m3 are required so that the conductivity of 200 (.m)- could be achieved in silicon using indium as an impurity? m2 Given that the mobility of holes in silicon is 0.05 and of electrons is V. Sec m 0.13 V. Sec
A. Why does the conductivity of a semiconductor and some insulators change with impurity content? Compare this with the behaviour of metallic conductors. B. Discuss the location of the Fermi levels of intrinsic and extrinsic (n-type and p-type) semiconductors in low temperature and high temperature ranges. C. Discuss why the structure of the p-n junction is so important to modern technologies that impact our daily life.
The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 × 10-4 s/m. Find the barrier potential at 300°K, if the µn = 2.4µp?
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
The applied electric field in p-type silicon is E=10V/cm. The semiconductor conductivity is 1.5(Ω-cm)-1and cross-sectional area is 10-5cm2. Determine the driftcurrent. (b) A drift current density of 120A/cm2is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration.

SEE MORE QUESTIONS

Recommended textbooks for you

Delmar's Standard Textbook Of Electricity

Electrical Engineering

ISBN:

9781337900348

Author:

Stephen L. Herman

Publisher:

Cengage Learning

Delmar's Standard Textbook Of Electricity

Electrical Engineering

ISBN:

9781337900348

Author:

Stephen L. Herman

Publisher:

Cengage Learning

SEE MORE TEXTBOOKS