Which of the following responses below is/are correct? Justify your answer(s) 35.When a thin slice of silicon is doped withindium or boron atomsIt acquires a net positive chargeA junction barrier potentialdifferonce develops in itHoles become the majority carriers inABitThe free flow of thermally generatedcharge carriers through the materialis inhibitedD

Indium and Boron are Group 13 elements. so they are trivalent impurities. So whenever a thin slice…

35. When a thin slice of silicon is doped with indium or boron atoms It acquires a net positive charge A A junction barrier potential difference develops in it Holes become the majority carriers in в it The free flow of thermally generated charge carriers through the material is inhibited D

35. When a thin slice of silicon is doped with indium or boron atoms It acquires a net positive charge A A junction barrier potential difference develops in it Holes become the majority carriers in в it The free flow of thermally generated charge carriers through the material is inhibited D

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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Question

Which of the following responses below is/are correct?

Justify your answer(s)

35.
When a thin slice of silicon is doped with
indium or boron atoms
It acquires a net positive charge
A junction barrier potential
differonce develops in it
Holes become the majority carriers in
A
B
it
The free flow of thermally generated
charge carriers through the material
is inhibited
D

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