P-type semiconductor with acceptor concentration N,=10 cm*and n=10° cm³, la=mp15pg/С,1000 cm?/V-sec, µ= 500 cm³/V-sec,that 3x10 cm³ electron hole pair have been created at t=0. The electronconcentration at t=25ns is....×10²cm³.20pg/C . Assumeeа) 3.8b) 5.7c) 11d)23e) 31

Given data: Na=1016 cm-3ni=109 cm-3μn=1000 cm2/V-sec Here Δn=3×1013 cm-3

P-type semiconductor with acceptor concentration N,=10°cn °cm*and n=10° cm, = т, 1000 cm/V-sec, µ,= 500 cm²/V-sec, 15рд/С, "р = 20pg/C . Assume e e that 3x10cmelectron hole pair have been created at t=0. The electron concentration at t=25ns is....×10²cm³. а) 3.8 b) 5.7 c) 11 d)23 e) 31

P-type semiconductor with acceptor concentration N,=10°cn °cm*and n=10° cm, = т, 1000 cm/V-sec, µ,= 500 cm²/V-sec, 15рд/С, "р = 20pg/C . Assume e e that 3x10cmelectron hole pair have been created at t=0. The electron concentration at t=25ns is....×10²cm³. а) 3.8 b) 5.7 c) 11 d)23 e) 31

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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