Please answer completely (d) In a Germanium semiconductor at T= 250 K (ni = 1x1012 cm³), it is found that po = 4no andthat Na = 0. Determine po, no, and Na.(e) Calculate the intrinsic carrier concentrations of these three bandgap materials at 300K:Eg = 1.12eV; and Eg = 0.66eV; where pre-factors are B=1.08x10³1 K³.cm³ (1.12€V) and B= 2.31x1030 K-³.cm³ (0.66eV). Si is doped with 2x1017 boron (B) atoms/cm³ and 6x1017 phosphorous (P) atoms/cm.

As per our policy, i am attempting first question. Given data, T=250 Kni=1×1012 cm-3p0=4n0Nd=0

Answered: (d) In a Germanium semiconductor at T=…

(d) In a Germanium semiconductor at T= 250 K (n = 1x101² cm³), it is found that that Na = 0. Determine po, no, and Na. Po 4no and 2001r

Delmar's Standard Textbook Of Electricity

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ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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Question

Please answer completely

(d) In a Germanium semiconductor at T= 250 K (ni = 1x1012 cm³), it is found that po = 4no and
that Na = 0. Determine po, no, and Na.
(e) Calculate the intrinsic carrier concentrations of these three bandgap materials at 300K:
Eg = 1.12eV; and Eg = 0.66eV; where pre-factors are B=1.08x10³1 K³.cm³ (1.12€V) and B
= 2.31x1030 K-³.cm³ (0.66eV).

Si is doped with 2x1017 boron (B) atoms/cm³ and 6x1017 phosphorous (P) atoms/cm.

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