0) A silicon sample is doped with one atom of acceptor for every 10° atoms of silicon. Find the electron and hole concentration ,and the total conductivity. What is the type of the sample ? Where, The density of silicon atoms is 5x102 cm3. The electron and hole mobilities are 1500 cm2/v-s and 500 cm /v-s, respectively. K= 1.38x10- J/°K, q= 1.6x10-19 C. -23

0) A silicon sample is doped with one atom of acceptor for every 10° atoms of silicon. Find the electron and hole concentration ,and the total conductivity. What is the type of the sample ? Where, The density of silicon atoms is 5x102 cm3. The electron and hole mobilities are 1500 cm2/v-s and 500 cm /v-s, respectively. K= 1.38x10- J/°K, q= 1.6x10-19 C. -23

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

See similar textbooks

Similar questions

How is a solid-state diode tested? Explain.
The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where R1 and R2 are the resistances at temperatures T1 and T2, respectively, and is known as the temperature coefficient of resistance. If a copper wire has a resistance of 55 at 20C, find the maximum permissible operating temperature of the wire if its resistance is to increase by at most 20. Take the temperature coefficient at 20C to be =0.00382.
What is CEMF?
Consider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3
uO 9:.0 A docs.google.com * ZAIN IQ l. Q3/B: Assume an ideal diode model for all the diodes in the circuit below. calculate voltages and currents through D1 and D2 9kQ 1N1199C R2 D1 18KQ 1N1199C D3 1N1199C V2 =12 V R3 1kQ R4 5kQ 1.22 V 11 mA 0.5 A O VD1 ID1 VD2 ID2 صفحة 4 من 6
Q-3. Draw 1-V characteristics of 5 V silicon zener diode (Vz-5V) and show its parameters V Vz, Izx. Izs, Izm on the curve. Q-4. Determine the range of Road (Rmin, Rmax) that will maintain Vz at 5 volts for the circuit given below. Rs m 1.0kg V1 40 V Pzm=150mw
A forward voltage of 1.75V shifts to the left at a rate 2.65mV per degree centigrade in temperature from 25°C to -35°C. What is the new forward voltage of the diode? * Your answer Find the reverse saturation current of a Silicon diode that displays a forward current of 20 mA at 0.75 V when the Thermal Voltage is 0.038 V. ( Express your answer in 3 decimal places. Your answer can be in p (pico) or n (nano) unit. e.g. only 5 nV. Upload your solution in the file upload question but type Final Answer here. * Your answer
In the circuit given in the figure, find the current passing through the diode in mA since R1 = 4.95Kohm, R2 = 2.50Kohm, R3 = 1.69Kohm, R4 = 5.44Kohm, VCC = 13.00V and the diode is silicon?
Silicon is doped with an indium concentration of 8×1019/cm3. Is indium a donor or acceptor impurity? Find the electron and hole concentrations, the electron and hole mobilities, and the resistivity of this silicon material at 300 K. Is this material n- or p-type?
Silicon is doped with an acceptor concentration of 2.5 × 1018/cm3. Find the electron and hole concentrations, the electron and hole mobilities, and the resistivity of this silicon material at 300 K. Is this material n- or p-type?
Draw the characteristics of Ideal and practical diodes. A semiconductor has electron and hole mobilities as Hn = 7500 cm³ /V. sec, Hp = n = 3.6 x 1012 cm-3. Find (i) The hole concentration when conductivity is minimum. (ii) The minimum conductivity. 300 cm /V.sec and
Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?