University Physics Volume 3
17th Edition
ISBN: 9781938168185
Author: William Moebs, Jeff Sanny
Publisher: OpenStax
expand_more
expand_more
format_list_bulleted
Textbook Question
Chapter 9, Problem 69P
A valence electron in a crystal absorbs a photon of wavelength,
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
The gap between valence and conduction bands in diamond is 5.47 eV.What is the maximum wavelength of a photon that can excite an electron from the top of the valence band into the conduction band? In what region of the electromagnetic spectrum does this photon lie?
A ALAS semiconductor crystal has a lattice constant of a = 0.13 nm, the volume density of As
atoms in this crystal will be:
O 3.641e24 /cm^3
2.048e30 /cm^3
O 1.821e24 /cm^3
O 3.550e16 /cm^3
O 1.593e24 /cm^3
Because of its semiconducting properties, CdSCdS is sometimes used in electronic devices. The band gap energy for CdSCdS is 2.40 eVeV . What is wavelength of a photon with this energy?
Chapter 9 Solutions
University Physics Volume 3
Ch. 9 - Check Your Understanding Why is the potential...Ch. 9 - Check Your Understanding What does the energy...Ch. 9 - Check Your Understanding If the dissociation...Ch. 9 - Check Your Understanding What happens to the...Ch. 9 - Check Your Understanding How does the magnitude of...Ch. 9 - Check Your Understanding What conditions are...Ch. 9 - What is the main difference between an ionic bond,...Ch. 9 - For the following cases, what type of bonding...Ch. 9 - Describe three steps to ionic bonding.Ch. 9 - What prevents a positive and negative ion from...
Ch. 9 - For the H2 molecule, why must the spins the...Ch. 9 - Does the absorption spectrum of the diatomic...Ch. 9 - Rank the energy spacing (E) of the following...Ch. 9 - Explain key features of a vibrational-rotation...Ch. 9 - Why is tbe equilibrium separation distance between...Ch. 9 - Describe the difference between a face-centered...Ch. 9 - In sodium chloride, how many Clatoms are “nearest...Ch. 9 - In cesium iodide, how many Clatoms are "nearest...Ch. 9 - The NaCl crystal structure is FCC. The equilibrium...Ch. 9 - Why does the Fermi energy (EF) increase with the...Ch. 9 - If the election number density (N/V) of a metal...Ch. 9 - Why does the horizontal Line in the graph in...Ch. 9 - Why does the graph in Figure 9.12 increase...Ch. 9 - Why are the sharp transitions at the Fermi energy...Ch. 9 - What are the two main approaches used to determine...Ch. 9 - Describe two features of energy levels for an...Ch. 9 - How does the number of energy levels in a band...Ch. 9 - Why are some materials very good conductors and...Ch. 9 - Why are some materials semiconductors?Ch. 9 - Why does the resistance of a semiconductor...Ch. 9 - What kind of semiconductor is produced if...Ch. 9 - What kind of semiconductor is produced if silicon...Ch. 9 - What is the Hall effect and what is it used for?Ch. 9 - For an n-type semiconductor, how do impurity atoms...Ch. 9 - For a p-type semiconductor, how do impurity atoms...Ch. 9 - When p- and n-type materials are joined, why is a...Ch. 9 - When p- and n-type materials are joined, why does...Ch. 9 - How do you know if a diode is in the forward...Ch. 9 - Why does the reverse bias configuration lead to a...Ch. 9 - What happens in the extreme case that where the n-...Ch. 9 - Explain how an audio amplifier works, using the...Ch. 9 - Describe two main features of a superconductor.Ch. 9 - How does BCS theory explain superconductivity?Ch. 9 - What is the Meissner effect?Ch. 9 - What impact does an increasing magnetic field have...Ch. 9 - The electron configuration of carbon is 1s22s22p2....Ch. 9 - Potassium chloride (KCl) is a molecule formed by...Ch. 9 - The electron affinity of Cl is 3.89 eV and the...Ch. 9 - The measured energy dissociated energy of KC1 is...Ch. 9 - In a physics lab, you measure the vibrational-...Ch. 9 - For the preceding problem, find the equilibrium...Ch. 9 - The separation between oxygen atoms in an O2...Ch. 9 - The characteristic energy of the N2 molecule is...Ch. 9 - The characteristic energy for KCl is 1.4105eV ....Ch. 9 - A diatomic F2 molecule is in the l = 1 state, (a)...Ch. 9 - In a physics lab, you measure the vibrational-...Ch. 9 - The Csl crystal structure is BCC. The equilibrium...Ch. 9 - The potential energy of a crystal is - 8.10 eV/ion...Ch. 9 - The measured density of a NaF crystal is 2.558...Ch. 9 - What value of the repulsion constant, n, gives the...Ch. 9 - Determine the dissociation energy of 12 moles of...Ch. 9 - The measured density of a KCl crystal is 1.984...Ch. 9 - What value of the repulsion constant, n, gives the...Ch. 9 - The measured density of a CsCl crystal is 3.988...Ch. 9 - What is the difference in energy between the...Ch. 9 - An electron is confined to a metal cube of I = 0.8...Ch. 9 - What value of energy corresponds to a density of...Ch. 9 - Compare the density of states at 2.5 eV and 0.25...Ch. 9 - Consider a cube of copper with edges 1.50 mm long....Ch. 9 - If there is one free electron per atom of copper,...Ch. 9 - Determine the Fermi energy and temperature for...Ch. 9 - For a one-dimensional crystal, write the lattice...Ch. 9 - What is the main difference between an insulator...Ch. 9 - What is the longest wavelength for a photon that...Ch. 9 - A valence electron in a crystal absorbs a photon...Ch. 9 - An experiment is performed to demonstrate the Hall...Ch. 9 - Suppose that the cross-sectional area of the strip...Ch. 9 - A current-carrying copper wire with cross-section...Ch. 9 - The Hall effect is demonstrated in the laboratory....Ch. 9 - Show that for V less than zero, InetI0.Ch. 9 - A p-n diode has a reverse saturation current...Ch. 9 - The collector current of a transistor is 3.4 A for...Ch. 9 - Applying the positive end of a battery to the...Ch. 9 - The base current of a transistor is 4.4 A, and its...Ch. 9 - At what temperature, in terms of Tc, is the...Ch. 9 - What is the critical magnetic field for lead at T...Ch. 9 - A Pb wire wound in a tight solenoid of diameter of...Ch. 9 - A tightly wound solenoid at 4.0 K is 50 cm long...Ch. 9 - Potassium fluoride (KF) is a molecule formed by...Ch. 9 - For the preceding problem, sketch the potential...Ch. 9 - The separation between hydrogen atoms in a H2...Ch. 9 - The characteristic energy of the Cl2 molecule is...Ch. 9 - Determine the lowest three rotational energy...Ch. 9 - A carbon atom can hybridize in the...Ch. 9 - List five main characteristics of ionic crystals...Ch. 9 - Why is bonding in favorable? Express your answer...Ch. 9 - Astronomers claim to find evidence of He2 from...Ch. 9 - Show that the moment of inertia of a diatomic...Ch. 9 - Show that the average energy of an electron in a...Ch. 9 - Measurements of a superconductor's critical...Ch. 9 - Estimate the fraction of Si atoms that must be...Ch. 9 - Transition in the rotation spectrum are observed...Ch. 9 - Determine the Fermi energies for (a) Mg, (b) Na,...Ch. 9 - Find the average energy of an electron in a Zn...Ch. 9 - What value of the repulsion constant, n, gives the...Ch. 9 - A physical model of a diamond suggests packing...Ch. 9 - For an electron in a three-dimensional metal, show...
Additional Science Textbook Solutions
Find more solutions based on key concepts
(a) Calculate the rotational kinetic energy of Earth on its axis. (b) What is the rotational kinetic energy of ...
College Physics
29.29 The conducting rod ab shown in Fig. E29.29 makes contact with metal rails ca and db. The apparatus is in ...
University Physics with Modern Physics (14th Edition)
1. If an object is not moving, does that mean that there are no forces acting on it? Explain.
College Physics: A Strategic Approach (4th Edition)
The proton is a composite particle composed of three quarks, all of which are either up quarks (u; charge +23e)...
Essential University Physics: Volume 2 (3rd Edition)
Can a wire cany a current and still be neutral—that is, have a total charge of zero? Explain.
University Physics Volume 2
8. A 1000 kg car pushes a 2000 kg truck that has a dead battery. When the driver steps on the accelerator, the ...
Physics for Scientists and Engineers: A Strategic Approach, Vol. 1 (Chs 1-21) (4th Edition)
Knowledge Booster
Similar questions
- Most solar cells are semiconductor-based. If most solar radiation has a wavelength of less than 1m, what should the band gap of the solar cell material be? Silicon has a band gap of 1.14 eV. Is silicon a suitable solar cell material?arrow_forwardThe mean speed of conduction electron in Cu is electrons1.5 × 106 ms-1 and the frequency of vibration of the copper atoms at room temperature is about 4 × 1012 s-1. Estimate the drift mobility of electrons and the conductivity of Cu. The density of Cu is 8.96 g cm-3 and the atomic mass is 63.56 g mol-1.arrow_forwardQuestion 11: A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 ev. Can it detect a wavelength of 6000 nm?arrow_forward
- A high electron mobility transistor (HEMT) controls large currents by applying a small voltage to a thin sheet of electrons. The density and mobility of the electrons in the sheet are critical for the operation of the HEMT. HEMTS consisting of AlGaN/GaN/Si are being studied because they promise better performance at higher powers, temperatures, and frequencies than conventional silicon HEMTS can achieve. In one study, the Hall effect was used to measure the density of electrons in one of these new HEMTs. When a current of 12.1 ?A flows through the length of the electron sheet, which is 1.12 mm long, 0.223 mm wide, and 15.1 nm thick, a magnetic field of 1.05 T perpendicular to the sheet produces a voltage of 0.511 mV across the width of the sheet. What is the density of electrons per m3 in the sheet?arrow_forwardThe dispersion relation of the graphene conduction band is sketched in the figure below. What is the effective mass of conduction band electrons in graphene at the Dirac point? E slope = -Ak slope = Ak -k k O-1/(AK) OAK/2 O 1/(AK) O The effective mass is undefined.arrow_forwardThe plot of the E field with respect to x in a metal semiconductor junction at 300K is shown in the figure. The semiconductor is Si and E(0)=-2x10* V/cm and xo-0.2x10 cm. What is the semiconductor type and built in potential value. レEo) O a. n type 200 mV O b. n type 800 mv Oc p type 400 mV Od. p type 200 mV O e. n type 400 mV Of. p type 800 mvarrow_forward
- K:54)arrow_forwardAn LED emits light with a wavelength of 500 nm (500x10-9m). What is the band gap energy in electron Volts? Hint: recall Eq. (2) and 1 eV= 1.6 x10-19 J 1.2 eV 2.5 eV 3.3 eV 4.1 eV 5.5 eVarrow_forwardThe same kind of semiconducting material used to make an LED can also be used to convert absorbed light into electric energy, essentially operating as an LED in reverse. In this case, the absorption of a photon causes an electron transition from a filled state in the valence band to an unfilled state in the conduction band. If ΔEband = 1.4 eV, what is the minimum wavelength of electromagnetic radiation that could lead to electric energy output?A. 140 nm B. 890 nmC. 1400 nm D. 8900 nmarrow_forward
- 1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp 0.1 us NE 1019 сті Emitter concentration — 10 ст2/s -3 Dn = Dp NB 3D 1016 ст Base concentration Nc 1019 ст -3 = Collector concentration WE 3 µm Emitter width W 1.5 um Metallurgical base width, i.e. the distance between base-emitter junction and base-collector junction A = 10-5 cm² = Cross-sectional area If VCB = 0 V and VEB = 0.6 V, calculate the following: ЕВ a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.arrow_forwarda) for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?) Explain qualitatively the differences in intrinsic carrier concentrations b) Explain qualitatively why ni increases with increasing temperature. 1500 T(*C) 1019 1000 500 200 100 27 List of band gaps of semiconductor materials. 1018 Band g @ 302 Group Material Symbol 1017 IV Diamond 5.5 Ge IV Silicon Si 1.11 1016 IV Germanium Ge 0.67 IlI-V Gallium(II) nitride GaN 3.4 1015 III-V Gallium(III) phosphide GaP 2.26 III-V Gallium(III) arsenide GaAs 1.43 Si 1014 IV-V Silicon nitride Si,N, 5. IV-VI Lead(II) sulfide PbS 0.37 1013 IV-VI Silicon dioxide SiO2 Copper(1) oxide 2.1 MAIM 1012 1011 1010 GaAS 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1000/T(K ) Intrinsic carrier density n; (cm3)arrow_forwardA silicon p-n junction consists of a p-type region containing 3x1016 cm-3 acceptors and an n- type region containing also 1017 cm-3 donors. a. Calculate the density of electrons and holes in both p-type and n-type regions under thermal equilibrium at room temperature. b. Calculate the built-in potential of the p-n junction? c. Calculate the width of the depletion layer under a reverse bias of 1.0 V. d. Based on c, calculate the junction capacitance. Note that the junction cross-session area is 1.2 mm2.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning