FUND. OF PHYSICS (LL)-W/WILEY+NEXTGEN(2)
FUND. OF PHYSICS (LL)-W/WILEY+NEXTGEN(2)
11th Edition
ISBN: 9781119787235
Author: Halliday
Publisher: WILEY
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Chapter 41, Problem 20P
To determine

To calculate:

the number of occupied states in the energy range 0.0300 eV that is centered at a height of 6.10 eV in the valence band.

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Silicon is doped with phosphorus atoms (column V of Mendeleev table) with a concentration of 1018 cm-3 a- What is, at 27 °C, the electron density in doped Si. Use this result to derive the hole density. Which type of semiconductor is obtained? b- Calculate, at 27 °C, the position of the Fermi level EF and plot the band diagram.
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What is the number of occupied states in the energy range of 0.0300 eV that is centered at a height of 6.10 eV in the valenceband if the sample volume is 5.00 * 10-8 m3, the Fermi level is 5.00 eV, and the temperature is 1500 K?
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