FUND. OF PHYSICS (LL)-W/WILEY+NEXTGEN(2)
FUND. OF PHYSICS (LL)-W/WILEY+NEXTGEN(2)
11th Edition
ISBN: 9781119787235
Author: Halliday
Publisher: WILEY
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Chapter 41, Problem 10Q
To determine

To find:

(a) the location of conduction electrons.

(b) the valence electrons.

(c) an electron associated with the 2p subshell in an isolated silicon atom.

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In a silicon lattice, where should you look if you want to find (a) a conduction electron, (b) a valence electron, and (c) an electron associated with the 2p subshell of the isolated silicon atom?
Phosphorus (P) is present in a germanium (Ge) sample. Assume that one of its five valence electrons revolves in a Bohr orbit around each P+ ion in the Ge lattice. (a) If the effective mass of the electron is 0.17 me and the dielectric constant of Ge is 16, find the radius of the first Bohr orbit of the electron. (b) Ge has a band gap (Eg) of 0.65 eV. How does the ionization energy of the above electron comparing to Eg and kBT at room temperature?
Silicon is doped with 3×1018 arsenic atoms/cm3 and 8 × 1018 boron atoms/cm3. (a) Is this n- or p-type silicon? (b) What are the hole and electron concentrations at room temperature?
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