Physics for Scientists and Engineers
6th Edition
ISBN: 9781429281843
Author: Tipler
Publisher: MAC HIGHER
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Chapter 37, Problem 4P
(a)
To determine
The type of bonding mechanism for
(b)
To determine
The type of bonding mechanism for
(c)
To determine
The type of bonding mechanism for
(d)
To determine
The type of bonding mechanism for
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J: Choose an answer for the following items,
The bonding among atoms in NaCl crystalline structure is
i. (
(A) ionic.
(B) metallic.
(C) covalent.
(D) Van der Waals.
ii.
For a BJT with VBg (0on) = 0.7 V and Vce (sat) = 0.3 V, the operation mode if Vgg =
1 V and Ver = 1 V is
(A) cut off.
(B) linear.
(C) saturated.
(D) reverse active.
iii. (!
or a step potential function at x = 0, the probability that a particle exists in the
region x > 0 is
(A) zero.
(B) I.
(C) larger than zero.
(D) larger then 1.
iv.
potenual barrier.
(A) lower than
--., The forward applied bias voltage on the pn junction cannot be .. the built-in
(B) greater than
(C) equal to
(D) twire
v. ( -, If the lattice scattering is 3 cm /(V.S) and the ionized scattering is 4 cm /(V.S), then
the total scattering is
(A) 1.71 cm?/(V.S).
(B) 7 cm/(V.S).
(C) I cm/(V.S).
(D) 0.58 cm/(V.S).
) The probability that an electron exists at the Fermi energy level is
vi.
(A) U.7.
(В) 1.
(C) zero.
(D) 0.5.
vii.
The ratio of the effective…
The bond length in F2 is 1.417 Å, instead of twice theatomic radius of F, which is 1.28 Å. What can account forthe unexpected length of the F_ F bond?
5. a) Consider a GaAs pn junction, in thermal equilibrium at 300 K, under zero-bias and with dopant
concentrations of Na = 1 x 1017 cm³ on the p-side of the junction and Nd = 5 x 1015 cm3 on the
n-side. ɛr = 13.1 for GaAs. The cross-sectional area of the junction is 1 x 102 cm?. Determine the
following junction characteristics; state your answers in this form and show all work on a
separate page.
Vbi =
V
Xp =
m
Energy barrier AE =
eV
W =
Xn =
|{max| =
N/C
m
Qn =
Qp =
C
b) Consider the GaAs pn junction as described above under a reverse-bias of 2 V. Determine the
following junction characteristics; state your answers in this form and show work on a separate
page.
Energy barrier AE =
eV
W =
Chapter 37 Solutions
Physics for Scientists and Engineers
Ch. 37 - Prob. 1PCh. 37 - Prob. 2PCh. 37 - Prob. 3PCh. 37 - Prob. 4PCh. 37 - Prob. 5PCh. 37 - Prob. 6PCh. 37 - Prob. 7PCh. 37 - Prob. 8PCh. 37 - Prob. 9PCh. 37 - Prob. 10P
Ch. 37 - Prob. 11PCh. 37 - Prob. 12PCh. 37 - Prob. 13PCh. 37 - Prob. 14PCh. 37 - Prob. 15PCh. 37 - Prob. 16PCh. 37 - Prob. 17PCh. 37 - Prob. 18PCh. 37 - Prob. 19PCh. 37 - Prob. 20PCh. 37 - Prob. 21PCh. 37 - Prob. 22PCh. 37 - Prob. 23PCh. 37 - Prob. 24PCh. 37 - Prob. 25PCh. 37 - Prob. 26PCh. 37 - Prob. 27PCh. 37 - Prob. 28PCh. 37 - Prob. 29PCh. 37 - Prob. 30PCh. 37 - Prob. 31PCh. 37 - Prob. 32PCh. 37 - Prob. 33PCh. 37 - Prob. 34PCh. 37 - Prob. 35PCh. 37 - Prob. 36PCh. 37 - Prob. 37PCh. 37 - Prob. 38PCh. 37 - Prob. 39PCh. 37 - Prob. 40PCh. 37 - Prob. 41PCh. 37 - Prob. 42PCh. 37 - Prob. 43P
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Similar questions
- Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T= 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The acceptor concentration?arrow_forwardExample 1: Find the hole concentration in N-type semiconductor when the donor concentration is 2 x102cm-3 and intrinsic value of silicon material at T = 300° K is 1.25 x10 cm-3. ст %3D стarrow_forwardSilicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?arrow_forward
- The ionic crystal of NaCl has an fcc structure as shown below with the position of the Cl atom located at : (0 0 0); (½ ½ 0); ( ½ 0 %) and (0 ½) and Na atom is located at : (½ ½½) + fcc translation. The following are the physical data of NaCl: - Ionic radius Na = 0.98 A, Cl ion radius 1.81 A Atomic mass of Na = 22.99 amu, Atomic mass of Cl = 35.45 amu NaCl bulk modulus = 2.40 x 1010 N/m - Madelung's constant = 1.75 Young's modulus in the direction [100] = 5 x 1010 Nm-2 Debye temperature = 281 K - State the structural factors of NaCl, F in fNa and fCl (f = atomic scattering factor). Also determine the condition (h k 1) so that the value of F = 0.arrow_forward1.2 Below 24.5 K, Ne is a crystalline solid with an FCC structure. The interatomic interaction energy per atom can be written as: (1) 6 E(r) = -28 2E 14.45* (ii) (iii) – 12 13¹] (ev/atom) Where, & and o are constants that depend on the polarizability, the mean dipole moment, and the extent of overlap of core electrons. For crystalline Ne, & = 3.121 x 10-3 eV and a = 0.274 nm. 12.13 Show that the equilibrium separation between the atoms in an inert gas crystal is given by ro= (1.090) o. What is the equilibrium interatomic separation in the Ne crystal? Find the bonding energy per atom in solid Ne.arrow_forwardThe vacancy concentration for a metal A at a temperature T is 1.1 x 10-¹0. Calculate the vacancy concentration for the same metal at twice this temperature 2Q.arrow_forward
- Hcp structure . Show that the c/a ratio for an ideal hexagonal close- packed structure is (8/3)^1/2 = 1.633 . if c/a is significantly larger than this value , the crystal structure may be thought of as composed of planes of closely packed atoms, the planes being loosely stacked.arrow_forwardThe atomic radii of a divalent cation and a monovalent anion are 0.074 nm and 0.128 nm, respectively. Calculate the force of attraction between these two ions at their equilibrium interionic separation (i.e., when the ions just touch one another) and the force of repulsion at the same distance.arrow_forwardIn solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.arrow_forward
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