diode-connected NMOS device as shown belowwith VDD = 3.6 V and RLfollowing parameters: VTHGiven the NMOS common source amplifier degenerated by a8.5 kn, please answer the following questions. Note that M₁ and M₂ have the0.5V, k = 5004, and A = 0.001V-1. Also note that the DC input voltage isset such that the gate-to-source voltage of M2 is at VDD. Express all your answers up to THREE decimalplaces.VddTRL(0.5 pt) ID1,Q(0.5 pt) VDS1,Q(0.2 pt) VGS1,QM1(0.2 pt) gm1(0.2 pt) rol(0.2 pt) 9m2M2=1. Determine the DC operating point of M₁.μAVO VO2. (0.2 pt) What is the DC input voltage, VIN?3. What are the small signal parameters of M₁?mSΜΩmSV4. Derive the two-port parameters of the given source-degenerated CS amplifier. You may assume that rol » 1.(0.8 pt) Gm(0.8 pt) Ro(0.4 pt) AvmsΚΩ

Answered: Image /qna-images/answer/b64b6343-5bab-4fec-9c6f-71855331061d.jpg

Answered: VDD = 3.6 V and RL = 8.5 kn, please…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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d) What is the difference between npn and pnp transistor? e) Draw the energy level diagrams of semiconductor, insulator and conductor. rding to physical laws f) Show and explain the amplification in AC domain.
Design the following MOSFET circuit for it to operate in saturation mode with 0.5 mA drain current. Determine Rp and dc voltage VĎ. Assume V₁ = 2 V and K = 0.1 mA/V² for this MOSFET. 10 V RD -VD
Figure 1 shows the typical output characteristics of MOSFET. Those characteristics show the difference curve of the drain current, Ip, as function of the drain- source voltage, VDs at a given gate-source voltage, VGs. In the Figure 1, it shows that the Ohmic region. What the meaning of the Ohmic region? Explain with necessary example any consequences that will happen for any condition of MOSFET. 360 10 V ev 7V 320 280 Ohmic region + 240 200 160 120 5.5 V- 80 40 2 3 Vos [V] Figure 1 lo [A]
a. Design a stable bias circuit for a silicon npn BJT such that VCEQ = 4V and Ico = 2 ma. Assume Vcc = 12 V and Bmin = 80. %3D Use standard resistor values as much as possible. Do not forget to draw the circuit diagram of your design. b. Derive the load line equation; plot the load line and indicate the Q-point.
QUESTION 4 For an n-channel Junction Field-Effect Transistor (JFET), the gate-source cut-off voltage, VGS(OFF), is -4 V and the drain saturation current, Ipss is 50 mA. The drain current ID, is 12 mA. Determine the gate-to-source voltage, Vos, of the JFET.
Given shows the mutual characteristic for a junction gate field effect transistor. When the gate-source voltage is -2.5V, determine the value of drain current, the dynamic value of forward transconductance. -2.5V 2.5V - 12mA 5 mA -5.0-4.5 -4.0 -3.5 -3.0-2.5 -2.0 -1.5 -1.0 -0.5 Gate-source voltage, VGs (V) 0 20 18 16 14 12 10 00 6 4 2 0 Drain current, (mA)
d. The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30 mA. Determine VGS at this current level if k = 0.06 x 103 A/V? and VT is the maximum value.
Pictorially describe the fabrication steps of N-channel E MOSFET. The drawing and steps be in more details
04:- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE = 10 V. Use standard valued 5% resistors and draw a schematic diagram of your design. (10 points)
Question 3: A 2N6755 Harris n-channel MOSFET has a de supply voltage of 60-V, and a load resistance of 6-2. With a gate-source voltage of 10-V, the on-state resistance is 0.2-2. (a) Assuming that the MOSFET is acting as a simple on-off switch, determine the load power and efficiency. (b) The MOSFET above is now used in a 20-kHz chopper circuit. Assuming the parameters remain unchanged, calculate the load power and efficiency at a chopper duty cycle of 0.4.
7. VCE approximately equals when a transistor switch is cut off. 8. For a BJT, for common base configuration the output characteristics is represented by a plot between.. .and... . 9. The most frequent use of power diodes occurs in the ...
Draw the large-signal dc circuit model for a silicon npn transistor in the active region at room temperature. Include the constraints of currents and voltages that guarantee operation in the active region. Repeat for the saturation region. Repeat for the cutoff region.

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