Figure 1 shows the typical output characteristics of MOSFET. Those characteristics show the difference curve of the drain current, Ip, as function of the drain- source voltage, Vos at a given gate-source voltage, VGs- In the Figure 1, it shows that the Ohmic region. What the meaning of the Ohmic region? Explain with necessary example any consequences that will happen for any condition of MOSFET. 360 10 V 7V 320 280 Ohmic region 240 200 160 120 80 40 4. Vos [V]

Figure 1 shows the typical output characteristics of MOSFET. Those characteristics show the difference curve of the drain current, Ip, as function of the drain- source voltage, Vos at a given gate-source voltage, VGs- In the Figure 1, it shows that the Ohmic region. What the meaning of the Ohmic region? Explain with necessary example any consequences that will happen for any condition of MOSFET. 360 10 V 7V 320 280 Ohmic region 240 200 160 120 80 40 4. Vos [V]

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

• In MOSFET, it is the foundation upon which the device will be constructed and is formed from a silicon base A. Substrate, B. Slab, C. Source, D. Base.
Briefly explain how the current flow is enabled in a p-Type MOSFET. Include the direction of current flow and mention the role of the source, drain, and gate.
Design the following MOSFET circuit for it to operate in saturation mode with 0.5 mA drain current. Determine Rp and dc voltage VĎ. Assume V₁ = 2 V and K = 0.1 mA/V² for this MOSFET. 10 V RD -VD
d) What is the difference between npn and pnp transistor? e) Draw the energy level diagrams of semiconductor, insulator and conductor. rding to physical laws f) Show and explain the amplification in AC domain.
At high levels of gate current, the characteristics of an SCR approach those of what semiconductor device? a. MOSFET b. BJT c. JFET d. Diode
The terminal of the JFEI' is the equivalent of the emitter terminal of a BJT. Select one: A. drain B. gate C. anode D. source Previous page Next page
d. The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30 mA. Determine VGS at this current level if k = 0.06 x 103 A/V? and VT is the maximum value.
What do each of the three terms in the MOSFET threshold voltage equation represent? ☐ built-in voltage ☐ voltage needed to achieve flat-band voltage due to band bending in semiconductor ☐ voltage across oxide ☐ breakdown voltage
a) What is a Field effect transistor? Give its description and classification.b) Explain the working of n-channel / p-channel Junction Field EffectTransistor with its drain characteristics.
1. For a certain D-MOSFET, IDSS = 18 mA, and VGS = +10V. Vp =4V. a) Determine ID at VGS =+ 3V. b) Determine ID at VGS = -3V. %3D
The maximum drain current for the n-channel enrichment type MOSFET is 30 mA.Determine VGS with this current level if k= 0.06x10-3 A/V2 and VT is the maximum value.
Determine the VDS and the drain current for the E-MOSFET circuit shown. The data sheet for this particular MOSFET gives ID(ON)=500 mA at VGS=10 V and VGS(th)=1 V.