Two independent experiments are run in which two different types of paint are computed. Eighteen specimens are painted using type A, and drying time (in hours) is recorded each. The same is done with type B. The population standard deviations are both known to be 1.0. Assume that the mean drying time is equal for the two types of paint, find P(X-X >1.0), where XA and Xg are average drying times for samples of size na = na = 18

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For a germanium diode, calculate the current at room temperature if the forward voltage, V = 0.3 V and the reverse saturation current I, = 100 n.A. (A) 10.8 PA (B) 34.24 UA 11.79 mA (D) none

Silicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T= 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-³ and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. Assume the ionization energy for acceptors is 0.0345 eV. The fraction of total holes that are still in the acceptor states?

‏( a ) A PN diode has forward voltage drop VD= 0.3 V at 20 ° C . Assume the emission coefficient n = 1 , k = 1.38 * 10-23 J / K is Boltzmann's constant and q = 1.6 x 10-19  C is the magnitude of the electrical charge of an electron   (i) Identify the forward current iD at 20 ° C ( ii ) Determine and compare the current ip after a temperature rise of 40 ° C . Assume that reverse saturation current double for every 10 ° C rise in temperature.

Please provide Handwritten answer. 9. After following all the steps in the photolithography, a student found that all the photoresist (the exposed and unexposed photoresist) on the silicon wafer was washed away during the development step. This is due to... * A) the student used longer exposure time during alignment and exposure step B) the student used slower spin speed during spin coating producing thicker photoresists C) the student used longer development time during the development step D) the student used lower temperature and shorter baking time during the pre bake step E) the student misaligned the mask with the wafer during the alignment step 10. After photolithography process the wafer will go to the either etching process or doping process such as ion implantation and diffusion. * True or False

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Problems 01: Calculate the drift current density in silicon sample. If T=300 K, N=10²1/m³, Na=10²0/m³V, µn=0.85m²/V.s, =0.04m²/V.s, E=35 V/cm.. Hp

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