1. A silicon p-n junction has the hole and electron resistivity are 0.001 2.m, 0.004 22.m respectively in T-250 °K. The intrinsic carrier density is 6.2×10¹0 m³, the electron and hole diffusion length are 1.8×104 m, 1.1x104 m respectively, and th=8 us. Find reverse saturation current density.

1. You are to design a diode clipper circuit that will keep high voltage spikes from a 'noisy power supply from reaching sensitive electronics. A conventional silicon diode is used as part of the design. The clipper circuit is to be designed so that voltages 2 Resistor 10 volts are 'clipped'. SI Diode Vin from noisy Vout to electronics a) What would a suitable Zener breakdown voltage be? source Zener Diode b) From the manufacturer's specifications sheet, what would be a good choice for the Zener diode (i.e. what part number? 1Nxxx)? Why? c) If you want to 'clip' voltages that are s-10 volts as well, show how you would modify the circuit.

A semiconductor junction diode, we can say that: a) The diode is composed of two types of crystal, one positive side (Anode) and the other P-type (Cathode) side, allowing the flow of charge from N to P.b) It is an electronic component that has two terminals, the Anode (with material of type N - Electrons) and Cathode (with material of type P - Gaps), which allows the flow of charge from P to N.c) It is the union of a P-type crystal and an N-type crystal, thus creating a PN junction, thus creating a simple solid-state device, the junction semiconductor diode.d) At a temperature of 25 degrees Celsius, the depletion barrier has a potential barrier, which for silicon is 0.7 volts and for germanium it is 0.3 volts.e) None of the above options is correct. Choose one of the alternatives

2. Given a Si diode with the following physical ch/s the doping concentration in the p-type is 2.25x10" em" and in the n-type is 2.25x10"cm", junction area is 2x10° em', life time of hole in n-region-10 us, life time of electron in p-region -50 us, hole and electron mobility's are 600 em'v's' and 2100 cm'v's" respectively, the intrinsic carrier concentration is 1.4x10" cm und the voltage is 0.66 v operation at room temperature. Calculate Jo and Ju, then calculate the total diode current.

I. SOLVE THE FOLLONING PROBLENS : A COPPER WIRE OF 0,3 Mm RAAUS HAS A LEN ETH OF 1. JOM- IF THE RESISTIVITY of cOpPER IS 1-7 x0 WHAT WOULD BE THE RESISTANOE OF THE WIRE? OF A 100m WIRE IS 1035 mm AND 3.7 OHMS. WHAT 2. THE DIAMETER THE REISTANCE IS IS THE CONDUCTIVITY 3. WHAT WILL BE THE VALUE OF A CAPACITOR WHEN IT HAS A CAPACITIVE REACTANCE OF 300R ANP to A 6o HZ. SUPPLY? IN FARADS IS CONNECTED 4. WHAT Is THE VALUE OF THE RESISTOR WITH THE FOLLOWING COLORS ? A. BROWN, BLACK, GOLD, REP B. BLUE YELON BROWN, SILVER PED, SILVER, BROWN, VIOET C. 5. AND t WHEN V 220V AND R= 50n WHEN I = 45 A WHEN V = 120V FIND V ANO R 80n AND AND E= 11A-

Please Help ASAP!!! Just do A-C

Please answer in short like it definitely don't reject in shorts please.. Thanks.. Please  Asap

Answer ASAP, I'll upvote. Thanks. Take the first part of the energy band figure shown below where material A is attached to material B. If a positive voltage was applied to A, and B was attached to ground, is the AB junctionforward-biased or reverse-biased? The built-in voltage of a PN junction is due to a charge gradient between the two sides of the junction, as shown by the graphs. What is the cause of this charge gradient? Answer in 1 sentence.

4 - The figure below shows a part of the energy band diagram of a p-n semiconductor junction. According to the situation shown in the figure, in the equilibrium condition, we can identify the currents as follows: *image attached* ( ) i1:hole diffusion current, i2:electron drift current, i3:hole drift current and i4:electron diffusion current. ( ) i1:hole drift current, i2:electron diffusion current, i3:hole diffusion current and i4:electron drift current. ( ) i1:electron diffusion current, i2:electron diffusion current, i3:hole drift current and i4:hole drift current. ( ) i1:electron drift current, i2:electron diffusion current, i3:hole diffusion current and i4:hole drift current. ( ) i1:hole drift current, i2:electron drift current, i3:hole diffusion current and i4:electron diffusion current.

Silicon diode has a saturation current of 0.01*10^-6 at room temperature of 300k. Find the saturation current at 400k. Hole mobility for silicon 0.048m3/v-s, electron mobility of silicon 0.135m3/v-s.