Take a graph sheet and divide it into 4 equal parts. Mark origin at the center of the graph sheet. Now mark +ve X-axis as Vf, -ve X-axis as Vr, +ve Y-axis as Ifand –ve Y-axis as Ir. Mark the readings tabulated for Si forward biased condition in first Quadrant and Si reverse biased condition in third Quadrant.

The reflection coefficient for a device is found to be 0.75. What will be the corresponding return loss of the device?

Q8 - You wish to end up with a 2um width metal line (measured at the top of the metal lead cross section). A) You are using an isotropic wet etch process on a 1um thick metal layer. What linewidth should the protective photoresist line be to get these results? Sketch the resulting structure before photoresist strip. B) now you are using a completely anisotropic etch, what is the requisite linewidth of the photoresist to achieve the same end goal? Sketch the resulting structure before the stripping of the photoresist.

Two positive point charges q1=4.40 uC and q2=6.40 uC are separated in vaccum in distacne of 6.0m find the magnitude of the net electric at point r!=4.80m from q1 in N/C