If the hole mobility in a sample of silicon doped P-type is 108.0 cm^2/Vs at 275°K, then what is the diffusion constant for holes at this same temperature in cm^2/s? (Hint: Remember that kT/q = 26mV at 300°K, and use this to find the value for kT/q at 275°K.)
If the hole mobility in a sample of silicon doped P-type is 108.0 cm^2/Vs at 275°K, then what is the diffusion constant for holes at this same temperature in cm^2/s? (Hint: Remember that kT/q = 26mV at 300°K, and use this to find the value for kT/q at 275°K.)
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ISBN:9780133923605
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If the hole mobility in a sample of silicon doped P-type is 108.0 cm^2/Vs at 275°K, then what is the diffusion constant for holes at this same temperature in cm^2/s? (Hint: Remember that kT/q = 26mV at 300°K, and use this to find the value for kT/q at 275°K.)
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