Consider an n-type silicon for which the dopant concentration is ND = 1016 cm-3.  Find: a) The electron and hole concentration at T = 300K b) Repeat for T = 500K

Capacitance per unit area at no reverse bias is two pF/cm2. For a step graded diode of area 5cm2, what is net capacitance at 99 V reverse bias voltage?

The circuit below has a variable voltage vin as its input. We are interested in Vout as a function of Vin. In other words, if we vary the value of the voltage source vin, what will be the effect on the voltage Vout? The steps below will help you to investigate this question, and your answers will form the basis for a new design. Assume that the diode can be sufficiently modelled as simple diode with forward voltage of 0.7 V (you do not need Shockley's equation). Vin 100Ω M Vf = 0.7 V 2 V V out

Consider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?