2. An N-type silicon sample has an arsenic dopant density of 10¹7 cm³³. Determine: a) The temperature at which half the impurity atoms are ionized. (finalize the equation for obtaining the temperature; no need to solve the equation. The same for part b) b) The temperature at which the intrinsic density exceeds the dopant density by a factor of 10. Assume Eg does not change with T. c) Assuming complete ionization, calculate the minority carrier density at 300 K and the location of the Fermi level referred to Ec.

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
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2. An N-type silicon sample has an arsenic dopant density of \(10^{17} \, \text{cm}^{-3}\). Determine:
a) The temperature at which half the impurity atoms are ionized. (Finalize the equation for obtaining the temperature; no need to solve the equation. The same for part b.)
b) The temperature at which the intrinsic density exceeds the dopant density by a factor of 10. Assume \(E_g\) does not change with \(T\).
c) Assuming complete ionization, calculate the minority carrier density at 300 K and the location of the Fermi level referred to \(E_C\).
Transcribed Image Text:2. An N-type silicon sample has an arsenic dopant density of \(10^{17} \, \text{cm}^{-3}\). Determine: a) The temperature at which half the impurity atoms are ionized. (Finalize the equation for obtaining the temperature; no need to solve the equation. The same for part b.) b) The temperature at which the intrinsic density exceeds the dopant density by a factor of 10. Assume \(E_g\) does not change with \(T\). c) Assuming complete ionization, calculate the minority carrier density at 300 K and the location of the Fermi level referred to \(E_C\).
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