For the circuit, take VTN=0.8V, the conduction parameter Kn=1 mA/V2 and A-0. Calculate the Gate- Source voltage VGS and drain-source voltage VDS.

Calculate the drain current in an NMOS transistorfor VGS = 0, 1 V, 2 V, and 3 V, with VDS = 0.1 V,if W = 10 μm, L = 0.2 μm, VT N = 0.8 V, andK'n = 250 μA/V2. What is the value of Kn?

The circuit shown ensures a constant current of 100 mA is delivered to the load even if the load conditions are changing. The Zener breakdown voltage is 9 V. Determine the value of R needed. Assume the transistor is Silicon and that V* is large enough to cause the Zener to go into breakdown and to prevent the transistor from going into saturation. Assume further that the collector and emitter currents are approximately equal. V+ R Vz A 1 k2 Load

(b) List the steps needed to test any four-terminal MOSFET with the same setup to determine which terminal is the gate, which terminal is the body, whether the device is a N-cha (c) If the gate oxide were destroyed by a static electricity discharge, speculate on how the current readings might be different from those that were observed.Be detailed in your response.