For the MOSFET shown in Figure Q2d, VGs (off) = -6V, IDss = 10.5 mA and VDs = 11V. Determine, %3D i) What is the type of MOSFET and the amplifier configuration? ii) What is the value of the drain resistance, Rp? 15V VDD RD 5 Q1 RG 9MO Figure Q2d

Determine in which mode (depletion, enhancement or neither) each D-MOSFET in the figure below.

d) In Figure 3.3 shows the circuit diagram of a typical n-channel JFET common source amplifier. If ac input impedance of this amplifier is RGG=1.XY MOhm, VG = 2.XYV, RD=1.5 x Rs and VDD = 15 V. Determine the value of Rs to set the Q-point to VGs = -0.5 V and ID=2.5 mA. What is the value of VDs at the Q-point? Sketch the amplifier's small signal equivalent circuit model. If the JFET transconductance at this bias point (Q-point) is gm=4.XY mS and go=0.1 ms, what is the AC open circuit voltage gain Av and the AC short circuit current gain Ai of this amplifier Vin RG1 Cin HH RG2 -41 VG + VDD RD Rs VD Cout www11 Figure 3.3 Vout Cs ¡out x=1 y=7

Determine vo versus v₁ for the circuit shown in Figure 2. Assume that the MOSFET operates in saturation and is characterized by the parameters K and VT. Vs R₁ www Figure 2 wwww RL R₂ wwwww VO Note: assuming the MOSFET works at normal saturation regime and ips= (VDS -VT)²2 K 2

A. Detemine the value of the collector resistor in an npn transistor amplifier with Ppc = 250, VBB = 2.5 V, Vcc = 9 V, VCE = 4 V, and Rg = 100 k2. B. Detemine Icsat) for the transistor in below Figure. What is the value of IB necessary to produce saturation? What minimum value of VIN is necessary for saturation? Assume %3D VCE(sat) = 0 V. +5 V 10 kN Rg VINO BDc = 150 1.0 MN

2. Determine the VCB (i.e., voltage difference between collector C and base B) in the transistor circuit shown in the figure below. The transistor is silicon type (i.e., VBE is 0.7V) and has current gain hEE- 150. (Assume the transistor is working on active region) Rc 100 2 RB 10V Vcc 10 k2 VBR = 5V

An enhancement type N-MOSFET with VT = 2 V that conducts a current ID = 5 mA for VGS = 4 V and VDS = 5 V. What is the value of ID for VGS = 3 V and VDS = 6 V?

Consider the circuit in Figure 2. The transistor has a parameter B that varies between 50 and 200. You want to know the operation of the circuit and the electrical variables at the end points. Calculate the following for B= 50 and B= 200. a) IE, VE and VB (Analysis in DC). b) The input resistance R." (Small signal analysis). c) The voltage gain VO/Vsing (Small signal analy). This 10 ΚΩ www o Rin 100 ΚΩ +3V +1₁ HH 1 ΚΩ 1₁ 1 ΚΩ