alculate the current and transconductance of an n-channel MOSFET having following physical parameters: L=5 µm, W=100 um, to=100 A', µ„=300 cm²/V.s, Vr=1 V, and bias voltages: Ves=4 V, VDs=6 V and Vsp=0 v. What is the value of channel length modulation parameter, 2. for this device at room temperature if ra=200 KQ at the given bias conditions? [Data given: &, si = 11.9, ɛ, sio2 = 3.9, E=8.854x10 14 F/em, At room Temperature of 300 K: Intrinsic carrier concentration of Si, n=1.45x1010 cm, N=2.8x1019 cm*, Na=1015 cm', Metal gate work function=4.05 eV, Electron affinity of Si= 4.05 eV. Symbols have their usual meaning.
alculate the current and transconductance of an n-channel MOSFET having following physical parameters: L=5 µm, W=100 um, to=100 A', µ„=300 cm²/V.s, Vr=1 V, and bias voltages: Ves=4 V, VDs=6 V and Vsp=0 v. What is the value of channel length modulation parameter, 2. for this device at room temperature if ra=200 KQ at the given bias conditions? [Data given: &, si = 11.9, ɛ, sio2 = 3.9, E=8.854x10 14 F/em, At room Temperature of 300 K: Intrinsic carrier concentration of Si, n=1.45x1010 cm, N=2.8x1019 cm*, Na=1015 cm', Metal gate work function=4.05 eV, Electron affinity of Si= 4.05 eV. Symbols have their usual meaning.
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MOSFET. Calculate current and transconductance
Transcribed Image Text:alculate the current and transconductance of an n-channel MOSFET having following
physical parameters: L=5 µm, W=100 um, to=100 A', µ„=300 cm²/V.s, Vr=1 V, and bias
voltages: Ves=4 V, VDs=6 V and Vsp=0 v. What is the value of channel length modulation
parameter, 2. for this device at room temperature if ra=200 KQ at the given bias conditions?
[Data given: &, si = 11.9, ɛ, sio2 = 3.9, E=8.854x10 14 F/em, At room Temperature of 300 K:
Intrinsic carrier concentration of Si, n=1.45x1010 cm, N=2.8x1019 cm*, Na=1015 cm',
Metal gate work function=4.05 eV, Electron affinity of Si= 4.05 eV. Symbols have their
usual meaning.
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