5 The current mirror design below has the following technology and design parameters.All MOSFET transistors:L=7.9 µm, V=0.3 V, k = 283.1 uA/V²,and V" = 23.1 V/µm.Antn* The resistor R=1.5 KN, andtransistor Q2 has W,-35.5 um.* Supply voltage Vop-8.8 V.DD*Ignore channel length modulation in your DC current equations.Find W, , the width of transistor Q, in (um), knowing that the current I, for this circuit changes by 5.4 µA when V changes by 0.9 V.VDDloERVoQ1Q2Answer:

The current mirror design below has the following technology and design parameters. * All MOSFET transistors: L=7,9 µm, V=0.3 V, K = 283.1 µA/V²,and V' 23.1 V/µm. %3D tn An *The resistor R=1.5 KN, and * transistor Q2 has W,-35.5 um. * Supply voltage Vn-8.8 V. DD *Ignore channel length modulation in your DC current equations. Find W, , the width of transistor 0, in (um), knowing that the current I for this circuit changes by 5.4 µA when V changes by 0.9 V.

The current mirror design below has the following technology and design parameters. * All MOSFET transistors: L=7,9 µm, V=0.3 V, K = 283.1 µA/V²,and V' 23.1 V/µm. %3D tn An The resistor R=1.5 KN, and transistor Q2 has W,-35.5 um. * Supply voltage Vn-8.8 V. DD *Ignore channel length modulation in your DC current equations. Find W, , the width of transistor 0, in (um), knowing that the current I for this circuit changes by 5.4 µA when V changes by 0.9 V.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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