A  semiconductor substrate of 1 mm2 cross section is used to design a resistor. The doped-p concentration is 5'10^16 at/cm^3. and μp=500cm^2/Vxs We ask: (a) Calculate the electrical resistance for dimensions a= 100 mm, l= 500 mm, e= 0.1 mm. (b) The current density circulating for a voltage of 5 V. (c) The dopant concentration for R= 100 W.

Power System Analysis and Design (MindTap Course List)
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Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
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Chapter4: Transmission Line Parameters
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Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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A  semiconductor substrate of 1 mm2 cross section is used to design a resistor. The doped-p concentration is 5'10^16 at/cm^3. and μp=500cm^2/Vxs We ask:
(a) Calculate the electrical resistance for dimensions a= 100 mm, l= 500 mm, e= 0.1 mm.
(b) The current density circulating for a voltage of 5 V.
(c) The dopant concentration for R= 100 W.

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