-3 Germanium doped with 1024 m Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m?/V.s. .S. Boltzmann Constant=1.38×1023 J/K = 8.62x10s eV/K Unit charge= 1.602 x10*C Planck's constant= 6.626×10 4 J.sec-D4.136×10 1 eV.sec -34

Figure Q4 shows the silicon wafer. This silicon has been added with the two elements as listed in Table Q3. Identify the majority charge carrier in each extrinsic silicon wafer and justify your answer with illustrations.

5) Germanium doped with 1024 m3 Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m?/V.s.

TRUE OR FALSE A. Diffusion of charge carriers in a p-n junction is dependent on the concentration gradient of majority charge carriers. B. The Schottky contact in a metal-semiconductor system occurs when the p-type semiconductor contacts a metal with a higher work function than it.