a) An n-channel MOS is fabricated with the following parameters: Substrate doping density NA = 2.4 - 1018 cm-3 %3D • p* channel stop implant, N (chan. stop) = 2 x 1020 cm-3 %3D Gate oxide thickness tox = 18Å Source and drain diffusion doping density, Np = 2.4 1018 cm-3 The junction depth of the source and drain diffusion regions, x, = 32nm Width of the Junction, W = 400nm • Length of Junction, Y = 175nm Channel Length, L = 60nm Overlap Channel Length, Lp = 0.01um Determine the drain diffusion capacitance for VDe = 1.2V and VDR = 0.6V.

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a) An n-channel MOS is fabricated with the following parameters:
Substrate doping density NA = 2.4 · 101 cm-3
• p* channel stop implant, N (chan. stop) = 2 × 1020cm-3
Gate oxide thickness tox = 18Å
%3D
Source and drain diffusion doping density, Np = 2.4 1018 cm-3
The junction depth of the source and drain diffusion regions, x
= 32nm
Width of the Junction, W = 400nm
Length of Junction, Y = 175nm
Channel Length, L
= 60nm
Overlap Channel Length, Lp = 0.01um
Determine the drain diffusion capacitance for VDR
= 1.2V and VDE
= 0.6V.
Transcribed Image Text:a) An n-channel MOS is fabricated with the following parameters: Substrate doping density NA = 2.4 · 101 cm-3 • p* channel stop implant, N (chan. stop) = 2 × 1020cm-3 Gate oxide thickness tox = 18Å %3D Source and drain diffusion doping density, Np = 2.4 1018 cm-3 The junction depth of the source and drain diffusion regions, x = 32nm Width of the Junction, W = 400nm Length of Junction, Y = 175nm Channel Length, L = 60nm Overlap Channel Length, Lp = 0.01um Determine the drain diffusion capacitance for VDR = 1.2V and VDE = 0.6V.
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